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Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 16, 2020
First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiCMarianne Etzelmüller Bathen, Lasse Vines, José CoutinhoJournal of Physics. Condensed Matter : an Institute of Physics Journal|March 28, 2017
Diffusivity of the double negatively charged mono-vacancy in siliconChidanand Bhoodoo, Lasse Vines, Edouard Monakhov, et al.Physical Review Letters|February 7, 2013
Intrinsic point-defect balance in self-ion-implanted ZnOPekka T Neuvonen, Lasse Vines, Bengt G Svensson, et al.Physical Chemistry Chemical Physics : PCCP|February 5, 2020
Formation of N<sub>2</sub> bubbles along grain boundaries in (ZnO)<sub>1-x</sub>(GaN)<sub>x</sub>: nanoscale STEM-EELS studiesCalliope Bazioti, Vegard S Olsen, Andrej Y Kuznetsov, et al.Scientific Reports|June 15, 2021
On the permittivity of titanium dioxideJulie Bonkerud, Christian Zimmermann, Philip Michael Weiser, et al.Materials (Basel, Switzerland)|March 20, 2019
ZnCr₂O₄ Inclusions in ZnO Matrix Investigated by Probe-Corrected STEM-EELSWei Zhan, Andrey Yurievich Kosinskiy, Lasse Vines, et al.The Journal of Physical Chemistry Letters|August 1, 2019
Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM-EELS Nanoscale InvestigationsCalliope Bazioti, Alexander Azarov, Klaus M Johansen, et al.Ultramicroscopy|July 12, 2026
Decoupling composition and band gap in κ-Ga<sub>2</sub>O<sub>3</sub> heterostructures via STEM-EELSAnnett Thøgersen, Georg Muntingh, Lasse Vines, et al.Nanotechnology|February 12, 2019
Structural and optical properties of individual Zn<sub>2</sub>GeO<sub>4</sub> particles embedded in ZnOCecilie S Granerød, Bjørn L Aarseth, Phuong Dan Nguyen, et al.Journal of the American Chemical Society|February 26, 2019
Highly Correlated Hydride Ion Tracer Diffusion in SrTiO<sub>3- x</sub>H <sub>x</sub> OxyhydridesXin Liu, Tor Svendsen Bjørheim, Lasse Vines, et al.Pageof 2