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ACS Omega|August 29, 2019
β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic ApplicationsMengwei Si, Lingming Yang, Hong Zhou, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 15, 2015
Performance potential and limit of MoS2 transistorsXuefei Li, Lingming Yang, Mengwei Si, et al.
Nanotechnology|September 24, 2016
Surface chemistry of black phosphorus under a controlled oxidative environmentWei Luo, Dmitry Y Zemlyanov, Cory A Milligan, et al.
Nanoscale|January 26, 2016
Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistorsXuefei Li, Yuchen Du, Mengwei Si, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 28, 2015
Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA NanotubesJungwook Choi, Haorong Chen, Feiran Li, et al.
ACS Omega|August 29, 2019
How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?Lingming Yang, Adam Charnas, Gang Qiu, et al.
Nano Letters|October 14, 2014
Chloride molecular doping technique on 2D materials: WS2 and MoS2Lingming Yang, Kausik Majumdar, Han Liu, et al.
ACS Nano|September 27, 2017
Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic ApplicationsJingkai Qin, Gang Qiu, Jie Jian, et al.
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