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Physical Review Letters|November 5, 2004
Unusual directional dependence of exchange energies in GaAs diluted with Mn: is the RKKY description relevant?Priya Mahadevan, Alex Zunger, D D SarmaPhysical Review Letters|March 5, 2009
Full-zone spin splitting for electrons and holes in bulk GaAs and GaSbJun-Wei Luo, Gabriel Bester, Alex ZungerNano Letters|July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchangeJun-Wei Luo, Alberto Franceschetti, Alex ZungerPhysical Review Letters|April 2, 2019
Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped CarriersQihang Liu, Gustavo M Dalpian, Alex ZungerPhysical Review Letters|February 1, 2008
Atomic control of conductivity versus ferromagnetism in wide-gap oxides via selective doping: V, Nb, Ta in anatase TiO2Jorge Osorio-Guillén, Stephan Lany, Alex ZungerNano Letters|October 13, 2006
Impact ionization can explain carrier multiplication in PbSe quantum dotsA Franceschetti, J M An, A ZungerPhysical Review Letters|August 8, 2009
Electronic correlation in anion p orbitals impedes ferromagnetism due to cation vacancies in Zn chalcogenidesJ A Chan, Stephan Lany, Alex ZungerJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Design rules to achieve high-T(C) ferromagnetism in (Ga, Mn)As alloysA Franceschetti, A Zunger, M van SchilfgaardePhysical Review Letters|May 23, 2006
Importance of second-order piezoelectric effects in zinc-blende semiconductorsGabriel Bester, Xifan Wu, David Vanderbilt, et al.Physical Review Letters|January 18, 2018
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor NanowiresJun-Wei Luo, Shu-Shen Li, Alex ZungerPageof 46,912