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Physical Review Letters|October 4, 2000
Microscopic origin of the phenomenological equilibrium "Doping limit Rule" in n-type III-V semiconductorsZhang, Wei, ZungerPhysical Review Letters|January 15, 2011
Design principles and coupling mechanisms in the 2D quantum well topological insulator HgTe/CdTeJun-Wei Luo, Alex ZungerNano Letters|August 30, 2008
Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effectsJun-Wei Luo, Alberto Franceschetti, Alex ZungerPhysical Review Letters|March 5, 2009
Full-zone spin splitting for electrons and holes in bulk GaAs and GaSbJun-Wei Luo, Gabriel Bester, Alex ZungerNano Letters|July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchangeJun-Wei Luo, Alberto Franceschetti, Alex ZungerPhysical Review Letters|January 18, 2018
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor NanowiresJun-Wei Luo, Shu-Shen Li, Alex ZungerNano Letters|December 2, 2014
Reinterpretation of the expected electronic density of states of semiconductor nanowiresJianping Wang, Jun-Wei Luo, Lijun Zhang, et al.Physical Review Letters|February 14, 2012
Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductorsMayeul d'Avezac, Jun-Wei Luo, Thomas Chanier, et al.Nano Letters|January 6, 2012
Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowiresLijun Zhang, Mayeul d'Avezac, Jun-Wei Luo, et al.Physical Review Letters|October 6, 2000
Indium-indium pair correlation and surface segregation in InGaAs alloysCho, Zhang, ZungerPageof 104,000