Search research articles
Contact Us
Filters
Showing results (1-10 of 14) with videos related to
Page
of 2
Sort By:
ACS Combinatorial Science
|
April 11, 2015
Combinatorial Study of Ag-Te Thin Films and Their Application as Cation Supply Layer in CBRAM Cells
Wouter Devulder, Karl Opsomer, Johan Meersschaut, et al.
Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences
|
September 23, 2009
Electrodeposition of copper tetracyanoquinodimethane for bipolar resistive switching non-volatile memories
Robert Müller, Olivier Rouault, Aaron Katzenmeyer, et al.
Nanoscale
|
October 2, 2013
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices
Umberto Celano, Ludovic Goux, Karl Opsomer, et al.
Nano Letters
|
November 3, 2015
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
Umberto Celano, Ludovic Goux, Robin Degraeve, et al.
The Journal of Physical Chemistry Letters
|
August 12, 2015
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
Umberto Celano, Ludovic Goux, Attilio Belmonte, et al.
Faraday Discussions
|
October 23, 2018
Key material parameters driving CBRAM device performances
Ludovic Goux, Janaki Radhakrishnan, Attilio Belmonte, et al.
ACS Applied Materials & Interfaces
|
March 8, 2017
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory
Umberto Celano, Jonathan Op de Beeck, Sergiu Clima, et al.
ACS Applied Materials & Interfaces
|
April 14, 2018
Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Filamentary Switching Devices
Tareq Ahmad, Wouter Devulder, Karl Opsomer, et al.
Nano Letters
|
April 12, 2014
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices
Umberto Celano, Ludovic Goux, Attilio Belmonte, et al.
ACS Applied Materials & Interfaces
|
July 6, 2013
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells
Wouter Devulder, Karl Opsomer, Felix Seidel, et al.
Page
of 2
Search research articles
Search
Showing results (1-10 of 14) with videos related to
Sort By:
Page
of 2
ACS Combinatorial Science
|
April 11, 2015
Combinatorial Study of Ag-Te Thin Films and Their Application as Cation Supply Layer in CBRAM Cells
Wouter Devulder, Karl Opsomer, Johan Meersschaut, et al.
Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences
|
September 23, 2009
Electrodeposition of copper tetracyanoquinodimethane for bipolar resistive switching non-volatile memories
Robert Müller, Olivier Rouault, Aaron Katzenmeyer, et al.
Nanoscale
|
October 2, 2013
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices
Umberto Celano, Ludovic Goux, Karl Opsomer, et al.
Nano Letters
|
November 3, 2015
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
Umberto Celano, Ludovic Goux, Robin Degraeve, et al.
The Journal of Physical Chemistry Letters
|
August 12, 2015
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
Umberto Celano, Ludovic Goux, Attilio Belmonte, et al.
Faraday Discussions
|
October 23, 2018
Key material parameters driving CBRAM device performances
Ludovic Goux, Janaki Radhakrishnan, Attilio Belmonte, et al.
ACS Applied Materials & Interfaces
|
March 8, 2017
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory
Umberto Celano, Jonathan Op de Beeck, Sergiu Clima, et al.
ACS Applied Materials & Interfaces
|
April 14, 2018
Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Filamentary Switching Devices
Tareq Ahmad, Wouter Devulder, Karl Opsomer, et al.
Nano Letters
|
April 12, 2014
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices
Umberto Celano, Ludovic Goux, Attilio Belmonte, et al.
ACS Applied Materials & Interfaces
|
July 6, 2013
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells
Wouter Devulder, Karl Opsomer, Felix Seidel, et al.
Page
of 2