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Chemistry of Materials : a Publication of the American Chemical Society|March 9, 2018
Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe TomographyYizhi Wu, A Devin Giddings, Marcel A Verheijen, et al.
ACS Applied Electronic Materials|November 1, 2021
PO /Al2O3 Stacks for c-Si Surface Passivation: Material and Interface PropertiesRoel J Theeuwes, Jimmy Melskens, Lachlan E Black, et al.
Nano Letters|May 13, 2016
Metal-Insulator-Semiconductor Nanowire Network Solar CellsSebastian Z Oener, Jorik van de Groep, Bart Macco, et al.
ACS Applied Materials & Interfaces|December 28, 2019
Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 LayersShashank Balasubramanyam, Matthew A Bloodgood, Mark van Ommeren, et al.
ACS Applied Materials & Interfaces|July 17, 2023
Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °CMiika Mattinen, Jeff J P M Schulpen, Rebecca A Dawley, et al.
ACS Applied Materials & Interfaces|August 26, 2015
Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 PlasmaHarm C M Knoops, Eline M J Braeken, Koen de Peuter, et al.
ACS Applied Materials & Interfaces|July 28, 2023
In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO2 on Formamidinium-Based Lead Halide PerovskiteAndrea E A Bracesco, Jarvi W P Jansen, Haibo Xue, et al.
ACS Applied Nano Materials|December 30, 2022
Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of NanodevicesSven H Gerritsen, Nicholas J Chittock, Vincent Vandalon, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|March 15, 2023
Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule InhibitorI Tezsevin, J F W Maas, M J M Merkx, et al.
The Journal of Physical Chemistry. A|October 13, 2007
Production mechanisms of NH and NH2 radicals in N2-H2 plasmasJ H van Helden, P J van den Oever, W M M Kessels, et al.
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