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PO /Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties.

Roel J Theeuwes1, Jimmy Melskens1, Lachlan E Black2

  • 1Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.

ACS Applied Electronic Materials
|November 1, 2021
PubMed
Summary
This summary is machine-generated.

Lower deposition temperatures for phosphorus oxide (PO) / aluminum oxide (Al2O3) stacks improve crystalline silicon (c-Si) surface passivation after annealing. This enhancement is linked to hydrogen passivation and aluminum incorporation, forming AlPO4.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Surface Chemistry

Background:

  • Aluminum oxide (Al2O3) and phosphorus oxide (PO) stacks offer excellent surface passivation for crystalline silicon (c-Si).
  • Understanding the passivation mechanism requires detailed analysis of material and interface properties.

Purpose of the Study:

  • To investigate the influence of deposition and annealing temperatures on PO/Al2O3 stack properties.
  • To elucidate the passivation mechanism of PO/Al2O3 stacks on c-Si.

Main Methods:

  • Systematic variation of deposition temperatures (100-300 °C) and annealing temperatures (200-500 °C).
  • Analysis of material properties, interface defect density (Dit), and fixed charge density (Qf).

Main Results:

  • Lower deposition temperatures result in improved passivation quality after annealing.
  • Interface defect density (Dit) decreases significantly (3 orders of magnitude) upon annealing.
  • Fixed charge density (Qf) remains stable around +(3-9) × 10^12 cm^-2, indicating deposition-induced charge generation.

Conclusions:

  • Optimizing deposition temperature is crucial for achieving high-quality passivation.
  • Annealing significantly reduces interface defects, likely through hydrogen passivation and Al incorporation.
  • The formation of AlPO4 upon annealing contributes to the excellent chemical passivation.