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Marc Sanquer

Showing results (1-10 of 11) with videos related to

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 13, 2016
Single donor electronics and quantum functionalities with advanced CMOS technologyXavier Jehl, Yann-Michel Niquet, Marc Sanquer
Nature Physics|December 11, 2024
Collective energy gap of preformed Cooper pairs in disordered superconductorsThomas Dubouchet, Benjamin Sacépé, Johanna Seidemann, et al.
ACS Nano|August 6, 2011
Joule-assisted silicidation for short-channel silicon nanowire devicesMassimo Mongillo, Panayotis Spathis, Georgios Katsaros, et al.
Nature Communications|January 27, 2011
Pseudogap in a thin film of a conventional superconductorBenjamin Sacépé, Claude Chapelier, Tatyana I Baturina, et al.
Nano Letters|April 30, 2015
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperatureRomain Lavieville, François Triozon, Sylvain Barraud, et al.
Scientific Reports|February 24, 2022
Gate reflectometry of single-electron box arrays using calibrated low temperature matching networksMatthew J Filmer, Matthew Huebner, Thomas A Zirkle, et al.
Nano Letters|March 12, 2014
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistorBenoit Voisin, Viet-Hung Nguyen, Julien Renard, et al.
Nano Letters|January 13, 2017
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate ReflectometryAlessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, et al.
Physical Review Letters|April 26, 2018
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit QubitsAlessandro Crippa, Romain Maurand, Léo Bourdet, et al.
Nature Nanotechnology|May 16, 2019
Gate-based high fidelity spin readout in a CMOS deviceMatias Urdampilleta, David J Niegemann, Emmanuel Chanrion, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 13, 2016
Single donor electronics and quantum functionalities with advanced CMOS technologyXavier Jehl, Yann-Michel Niquet, Marc Sanquer
Nature Physics|December 11, 2024
Collective energy gap of preformed Cooper pairs in disordered superconductorsThomas Dubouchet, Benjamin Sacépé, Johanna Seidemann, et al.
ACS Nano|August 6, 2011
Joule-assisted silicidation for short-channel silicon nanowire devicesMassimo Mongillo, Panayotis Spathis, Georgios Katsaros, et al.
Nature Communications|January 27, 2011
Pseudogap in a thin film of a conventional superconductorBenjamin Sacépé, Claude Chapelier, Tatyana I Baturina, et al.
Nano Letters|April 30, 2015
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperatureRomain Lavieville, François Triozon, Sylvain Barraud, et al.
Scientific Reports|February 24, 2022
Gate reflectometry of single-electron box arrays using calibrated low temperature matching networksMatthew J Filmer, Matthew Huebner, Thomas A Zirkle, et al.
Nano Letters|March 12, 2014
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistorBenoit Voisin, Viet-Hung Nguyen, Julien Renard, et al.
Nano Letters|January 13, 2017
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate ReflectometryAlessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, et al.
Physical Review Letters|April 26, 2018
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit QubitsAlessandro Crippa, Romain Maurand, Léo Bourdet, et al.
Nature Nanotechnology|May 16, 2019
Gate-based high fidelity spin readout in a CMOS deviceMatias Urdampilleta, David J Niegemann, Emmanuel Chanrion, et al.
Pageof 2