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Scientific Reports|November 11, 2020
The principal axes systems for the elastic properties of monoclinic galliaMarius GrundmannPhysical Review Letters|January 15, 2011
Occurrence of rotation domains in heteroepitaxyMarius Grundmann, Tammo Böntgen, Michael LorenzOptics Letters|March 16, 2019
Applicability of the constitutive equations for the determination of the material properties of optically active materialsChris Sturm, Vitaly Zviagin, Marius GrundmannACS Applied Materials & Interfaces|August 20, 2014
Interface recombination current in type II heterostructure bipolar diodesMarius Grundmann, Robert Karsthof, Holger von WencksternAdvanced Materials (Deerfield Beach, Fla.)|October 15, 2011
Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistorsMichael Lorenz, Holger von Wenckstern, Marius GrundmannProceedings of the National Academy of Sciences of the United States of America|November 4, 2016
Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of meritChang Yang, Max Kneiβ, Michael Lorenz, et al.Nano Letters|October 24, 2018
Spatiotemporal Evolution of Coherent Polariton Modes in ZnO Microwire Cavities at Room TemperatureTom Michalsky, Marcel Wille, Marius Grundmann, et al.Scientific Reports|November 4, 2016
Raman tensor elements of β-Ga2O3Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, et al.The Review of Scientific Instruments|December 8, 2023
Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreadsMichael Lorenz, Holger Hochmuth, Holger von Wenckstern, et al.Physical Review Letters|April 9, 2016
Raman Tensor Formalism for Optically Anisotropic CrystalsChristian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, et al.Pageof 5