Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Marko Burghard

Showing results (21-30 of 67) with videos related to

Pageof 7
Sort By:
Nano Letters|March 10, 2005
Photocurrent imaging of charge transport barriers in carbon nanotube devicesKannan Balasubramanian, Marko Burghard, Klaus Kern, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 8, 2023
Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction DevicesEduardo J H Lee, Kannan Balasubramanian, Marko Burghard, et al.
Nano Letters|December 15, 2016
Hot Carrier Extraction from Multilayer GrapheneRoberto Urcuyo, Dinh Loc Duong, Patrick Sailer, et al.
Nano Letters|October 5, 2016
Hot Carrier Extraction from Multilayer GrapheneRoberto Urcuyo, Dinh Loc Duong, Patrick Sailer, et al.
ACS Applied Materials & Interfaces|May 31, 2019
Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe<sub>2</sub> HeterostructureJunhong Na, Youngwook Kim, Jurgen H Smet, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 1, 2010
Electrical properties and photoconductivity of stacked-graphene carbon nanotubesEduardo J H Lee, Linjie Zhi, Marko Burghard, et al.
Nano Letters|August 4, 2009
Effect of stacking order on the electric-field induced carrier modulation in graphene bilayersAdarsh Sagar, Eduardo J H Lee, Kannan Balasubramanian, et al.
Nanotechnology|June 4, 2016
Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplateletsPascal Gehring, Frieder B Reusch, Soudabeh S Mashhadi, et al.
ACS Nano|January 4, 2017
Raman Characterization of the Charge Density Wave Phase of 1T-TiSe<sub>2</sub>: From Bulk to Atomically Thin LayersDinh Loc Duong, Gihun Ryu, Alexander Hoyer, et al.
Nano Letters|January 11, 2007
High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayerRalf Thomas Weitz, Ute Zschieschang, Franz Effenberger, et al.
Pageof 7

Showing results (21-30 of 67) with videos related to

Sort By:
Pageof 7
Nano Letters|March 10, 2005
Photocurrent imaging of charge transport barriers in carbon nanotube devicesKannan Balasubramanian, Marko Burghard, Klaus Kern, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 8, 2023
Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction DevicesEduardo J H Lee, Kannan Balasubramanian, Marko Burghard, et al.
Nano Letters|December 15, 2016
Hot Carrier Extraction from Multilayer GrapheneRoberto Urcuyo, Dinh Loc Duong, Patrick Sailer, et al.
Nano Letters|October 5, 2016
Hot Carrier Extraction from Multilayer GrapheneRoberto Urcuyo, Dinh Loc Duong, Patrick Sailer, et al.
ACS Applied Materials & Interfaces|May 31, 2019
Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe<sub>2</sub> HeterostructureJunhong Na, Youngwook Kim, Jurgen H Smet, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 1, 2010
Electrical properties and photoconductivity of stacked-graphene carbon nanotubesEduardo J H Lee, Linjie Zhi, Marko Burghard, et al.
Nano Letters|August 4, 2009
Effect of stacking order on the electric-field induced carrier modulation in graphene bilayersAdarsh Sagar, Eduardo J H Lee, Kannan Balasubramanian, et al.
Nanotechnology|June 4, 2016
Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplateletsPascal Gehring, Frieder B Reusch, Soudabeh S Mashhadi, et al.
ACS Nano|January 4, 2017
Raman Characterization of the Charge Density Wave Phase of 1T-TiSe<sub>2</sub>: From Bulk to Atomically Thin LayersDinh Loc Duong, Gihun Ryu, Alexander Hoyer, et al.
Nano Letters|January 11, 2007
High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayerRalf Thomas Weitz, Ute Zschieschang, Franz Effenberger, et al.
Pageof 7