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Mathieu Luisier

Showing results (11-20 of 44) with videos related to

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The Journal of Chemical Physics|August 24, 2017
Efficient algorithms for large-scale quantum transport calculationsSascha Brück, Mauro Calderara, Mohammad Hossein Bani-Hashemian, et al.
ACS Nano|June 13, 2020
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the <i>Ab Initio</i> MicroscopeCedric Klinkert, Áron Szabó, Christian Stieger, et al.
Nano Letters|March 3, 2018
Tuning Electron-Phonon Interactions in Nanocrystals through Surface TerminationNuri Yazdani, Deniz Bozyigit, Kantawong Vuttivorakulchai, et al.
Nano Letters|April 27, 2026
Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write ProcessesPaul Solomon, Manasa Kaniselvan, Hiroyuki Miyazoe, et al.
Materials (Basel, Switzerland)|December 28, 2019
Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect TransistorsYouseung Lee, Demetrio Logoteta, Nicolas Cavassilas, et al.
Nature Communications|January 19, 2019
Light from van der Waals quantum tunneling devicesMarkus Parzefall, Áron Szabó, Takashi Taniguchi, et al.
ACS Nano|March 18, 2025
Impact of Interface and Surface Oxide Defects on WS<sub>2</sub> Electronic Properties from First PrinciplesBenoit Van Troeye, Fabian Ducry, Mauro Dossena, et al.
NPJ 2D Materials and Applications|April 29, 2026
Oxide induced degradation in MoS<sub>2</sub> field-effect transistorsFabian Ducry, Benoit Van Troeye, Mauro Dossena, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 24, 2016
Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery PerformanceLea V Nowack, Teutë Bunjaku, Karsten Wegner, et al.
ACS Nano|April 9, 2024
Versatile Nanoscale Three-Terminal Memristive Switch Enabled by GatingMila Lewerenz, Elias Passerini, Bojun Cheng, et al.
Pageof 5

Showing results (11-20 of 44) with videos related to

Sort By:
Pageof 5
The Journal of Chemical Physics|August 24, 2017
Efficient algorithms for large-scale quantum transport calculationsSascha Brück, Mauro Calderara, Mohammad Hossein Bani-Hashemian, et al.
ACS Nano|June 13, 2020
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the <i>Ab Initio</i> MicroscopeCedric Klinkert, Áron Szabó, Christian Stieger, et al.
Nano Letters|March 3, 2018
Tuning Electron-Phonon Interactions in Nanocrystals through Surface TerminationNuri Yazdani, Deniz Bozyigit, Kantawong Vuttivorakulchai, et al.
Nano Letters|April 27, 2026
Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write ProcessesPaul Solomon, Manasa Kaniselvan, Hiroyuki Miyazoe, et al.
Materials (Basel, Switzerland)|December 28, 2019
Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect TransistorsYouseung Lee, Demetrio Logoteta, Nicolas Cavassilas, et al.
Nature Communications|January 19, 2019
Light from van der Waals quantum tunneling devicesMarkus Parzefall, Áron Szabó, Takashi Taniguchi, et al.
ACS Nano|March 18, 2025
Impact of Interface and Surface Oxide Defects on WS<sub>2</sub> Electronic Properties from First PrinciplesBenoit Van Troeye, Fabian Ducry, Mauro Dossena, et al.
NPJ 2D Materials and Applications|April 29, 2026
Oxide induced degradation in MoS<sub>2</sub> field-effect transistorsFabian Ducry, Benoit Van Troeye, Mauro Dossena, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 24, 2016
Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery PerformanceLea V Nowack, Teutë Bunjaku, Karsten Wegner, et al.
ACS Nano|April 9, 2024
Versatile Nanoscale Three-Terminal Memristive Switch Enabled by GatingMila Lewerenz, Elias Passerini, Bojun Cheng, et al.
Pageof 5