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Nanotechnology
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November 12, 2009
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
Philippe Caroff, Maria E Messing, B Mattias Borg, et al.
Nanotechnology
|
December 14, 2011
Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications
Sepideh Gorji Ghalamestani, Sofia Johansson, B Mattias Borg, et al.
ACS Applied Materials & Interfaces
|
October 3, 2024
Ferroelectricity in Ultrathin HfO<sub>2</sub>-Based Films by Nanosecond Laser Annealing
Robin Athle, Megan O Hill, Austin Irish, et al.
Nano Letters
|
March 24, 2017
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
Johannes Gooth, Mattias Borg, Heinz Schmid, et al.
Nano Letters
|
September 8, 2011
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
Bahram Ganjipour, Anil W Dey, B Mattias Borg, et al.
Nanotechnology
|
September 30, 2014
Electrical properties of GaSb/InAsSb core/shell nanowires
Bahram Ganjipour, Sobhan Sepehri, Anil W Dey, et al.
ACS Nano
|
February 23, 2017
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
Mattias Borg, Heinz Schmid, Johannes Gooth, et al.
Nano Letters
|
March 18, 2014
Vertical III-V nanowire device integration on Si(100)
Mattias Borg, Heinz Schmid, Kirsten E Moselund, et al.
ACS Nano
|
June 29, 2016
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
Johannes Gooth, Robert Zierold, Philip Sergelius, et al.
Nanotechnology
|
December 8, 2018
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Mattias Borg, Lynne Gignac, John Bruley, et al.
Page
of 2
Search research articles
Search
Showing results (11-20 of 20) with videos related to
Sort By:
Page
of 2
You have reached the last page of results.
This site can display upto 20 results.
Nanotechnology
|
November 12, 2009
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
Philippe Caroff, Maria E Messing, B Mattias Borg, et al.
Nanotechnology
|
December 14, 2011
Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications
Sepideh Gorji Ghalamestani, Sofia Johansson, B Mattias Borg, et al.
ACS Applied Materials & Interfaces
|
October 3, 2024
Ferroelectricity in Ultrathin HfO<sub>2</sub>-Based Films by Nanosecond Laser Annealing
Robin Athle, Megan O Hill, Austin Irish, et al.
Nano Letters
|
March 24, 2017
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
Johannes Gooth, Mattias Borg, Heinz Schmid, et al.
Nano Letters
|
September 8, 2011
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
Bahram Ganjipour, Anil W Dey, B Mattias Borg, et al.
Nanotechnology
|
September 30, 2014
Electrical properties of GaSb/InAsSb core/shell nanowires
Bahram Ganjipour, Sobhan Sepehri, Anil W Dey, et al.
ACS Nano
|
February 23, 2017
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
Mattias Borg, Heinz Schmid, Johannes Gooth, et al.
Nano Letters
|
March 18, 2014
Vertical III-V nanowire device integration on Si(100)
Mattias Borg, Heinz Schmid, Kirsten E Moselund, et al.
ACS Nano
|
June 29, 2016
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
Johannes Gooth, Robert Zierold, Philip Sergelius, et al.
Nanotechnology
|
December 8, 2018
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Mattias Borg, Lynne Gignac, John Bruley, et al.
Page
of 2