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ACS Applied Materials & Interfaces|April 26, 2024
Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDsMikołaj Chlipała, Henryk Turski
Nanomaterials (Basel, Switzerland)|January 24, 2025
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and PolaritiesArtem Bercha, Mikołaj Chlipała, Mateusz Hajdel, et al.
Physical Chemistry Chemical Physics : PCCP|June 12, 2023
The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI3/GaN interfaceEwelina Zdanowicz, Artur P Herman, Łukasz Przypis, et al.
Materials (Basel, Switzerland)|October 27, 2022
Negative Magnetoresistivity in Highly Doped n-Type GaNLeszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, et al.
ACS Applied Materials & Interfaces|June 20, 2026
Air-Cladding Blue Laser DiodesMarta Sawicka, Mateusz Hajdel, Oliwia Gołyga, et al.
ACS Applied Electronic Materials|June 16, 2025
Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDsMikołaj Chlipała, Konstantinos Akritidis, Iryna Levchenko, et al.
Nature Communications|November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating currentMikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
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