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Nature Communications
|
March 29, 2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, et al.
ACS Nano
|
January 25, 2025
Correction to "Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides"
Changsik Kim, Inyong Moon, Daeyeong Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
July 19, 2022
Selective Electron Beam Patterning of Oxygen-Doped WSe<sub>2</sub> for Seamless Lateral Junction Transistors
Tien Dat Ngo, Min Sup Choi, Myeongjin Lee, et al.
ACS Nano
|
January 17, 2017
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim, Inyong Moon, Daeyeong Lee, et al.
ACS Nano
|
October 23, 2025
Highly Reliable MoS<sub>2</sub> Flash Memory with Ultrathin TaO<sub><i>x</i></sub> Tunneling Layer Formed via Partial Oxidation of TaS<sub>2</sub> Floating Gate
Hoseong Shin, Yunseo Song, Kwangro Lee, et al.
Nano Letters
|
April 10, 2026
Near-Ideal van der Waals NbSe<sub>2</sub> Contacts for WSe<sub>2</sub> CMOS Electronics
Hyungyu Choi, Yunseo Song, Nasir Ali, et al.
Nano-Micro Letters
|
January 25, 2026
Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices
Eun Bee Ko, Junho Sung, Seon Yeon Choi, et al.
ACS Applied Materials & Interfaces
|
June 24, 2026
Machine Learning-Enabled In Situ Diagnostics for Intelligent Plasma-Based Semiconductor Manufacturing: A Review
Minji Kang, Seongho Kim, Eunseo Go, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 5, 2017
Electrically Driven Reversible Phase Changes in Layered In<sub>2</sub> Se<sub>3</sub> Crystalline Film
Min Sup Choi, Byung-Ki Cheong, Chang Ho Ra, et al.
ACS Nano
|
August 9, 2013
Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures
Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, et al.
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Showing results (11-20 of 25) with videos related to
Sort By:
Page
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Nature Communications
|
March 29, 2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, et al.
ACS Nano
|
January 25, 2025
Correction to "Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides"
Changsik Kim, Inyong Moon, Daeyeong Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
July 19, 2022
Selective Electron Beam Patterning of Oxygen-Doped WSe<sub>2</sub> for Seamless Lateral Junction Transistors
Tien Dat Ngo, Min Sup Choi, Myeongjin Lee, et al.
ACS Nano
|
January 17, 2017
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim, Inyong Moon, Daeyeong Lee, et al.
ACS Nano
|
October 23, 2025
Highly Reliable MoS<sub>2</sub> Flash Memory with Ultrathin TaO<sub><i>x</i></sub> Tunneling Layer Formed via Partial Oxidation of TaS<sub>2</sub> Floating Gate
Hoseong Shin, Yunseo Song, Kwangro Lee, et al.
Nano Letters
|
April 10, 2026
Near-Ideal van der Waals NbSe<sub>2</sub> Contacts for WSe<sub>2</sub> CMOS Electronics
Hyungyu Choi, Yunseo Song, Nasir Ali, et al.
Nano-Micro Letters
|
January 25, 2026
Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices
Eun Bee Ko, Junho Sung, Seon Yeon Choi, et al.
ACS Applied Materials & Interfaces
|
June 24, 2026
Machine Learning-Enabled In Situ Diagnostics for Intelligent Plasma-Based Semiconductor Manufacturing: A Review
Minji Kang, Seongho Kim, Eunseo Go, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 5, 2017
Electrically Driven Reversible Phase Changes in Layered In<sub>2</sub> Se<sub>3</sub> Crystalline Film
Min Sup Choi, Byung-Ki Cheong, Chang Ho Ra, et al.
ACS Nano
|
August 9, 2013
Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures
Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, et al.
Page
of 3