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ACS Applied Materials & Interfaces
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January 18, 2017
Understanding Coulomb Scattering Mechanism in Monolayer MoS<sub>2</sub> Channel in the Presence of h-BN Buffer Layer
Min-Kyu Joo, Byoung Hee Moon, Hyunjin Ji, et al.
Nano Letters
|
September 21, 2016
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS<sub>2</sub>/h-BN Heterostructure
Min-Kyu Joo, Byoung Hee Moon, Hyunjin Ji, et al.
ACS Applied Materials & Interfaces
|
June 26, 2025
Ideal Thickness in 2D van der Waals Multilayers with Vertical Double Side Contacts
Eunji Sim, Suin Seong, Yeongseo Han, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
February 27, 2020
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors
Jinbao Jiang, Manh-Ha Doan, Linfeng Sun, et al.
ACS Applied Materials & Interfaces
|
April 16, 2021
Restricted Channel Migration in 2D Multilayer ReS<sub>2</sub>
Chulmin Kim, Moonsoo Sung, Soo Yeon Kim, et al.
ACS Applied Materials & Interfaces
|
July 21, 2017
Ultrastretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets
Yourack Lee, Min-Kyu Joo, Viet Thong Le, et al.
ACS Applied Materials & Interfaces
|
July 18, 2019
Temperature-Dependent Opacity of the Gate Field Inside MoS<sub>2</sub> Field-Effect Transistors
Hyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, et al.
ACS Applied Materials & Interfaces
|
March 8, 2017
Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS<sub>2</sub> Field-Effect Transistors
Byoung Hee Moon, Gang Hee Han, Hyun Kim, et al.
Nanoscale
|
November 12, 2013
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation
Junhong Na, Min-Kyu Joo, Minju Shin, et al.
Materials Horizons
|
August 26, 2025
High-temperature negative differential resistance in tungsten diselenide multilayers without heterojunctions
Hyejin Kim, Taesoo Kim, Yeongseo Han, et al.
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Search research articles
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Showing results (21-30 of 33) with videos related to
Sort By:
Page
of 4
ACS Applied Materials & Interfaces
|
January 18, 2017
Understanding Coulomb Scattering Mechanism in Monolayer MoS<sub>2</sub> Channel in the Presence of h-BN Buffer Layer
Min-Kyu Joo, Byoung Hee Moon, Hyunjin Ji, et al.
Nano Letters
|
September 21, 2016
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS<sub>2</sub>/h-BN Heterostructure
Min-Kyu Joo, Byoung Hee Moon, Hyunjin Ji, et al.
ACS Applied Materials & Interfaces
|
June 26, 2025
Ideal Thickness in 2D van der Waals Multilayers with Vertical Double Side Contacts
Eunji Sim, Suin Seong, Yeongseo Han, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
February 27, 2020
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors
Jinbao Jiang, Manh-Ha Doan, Linfeng Sun, et al.
ACS Applied Materials & Interfaces
|
April 16, 2021
Restricted Channel Migration in 2D Multilayer ReS<sub>2</sub>
Chulmin Kim, Moonsoo Sung, Soo Yeon Kim, et al.
ACS Applied Materials & Interfaces
|
July 21, 2017
Ultrastretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets
Yourack Lee, Min-Kyu Joo, Viet Thong Le, et al.
ACS Applied Materials & Interfaces
|
July 18, 2019
Temperature-Dependent Opacity of the Gate Field Inside MoS<sub>2</sub> Field-Effect Transistors
Hyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, et al.
ACS Applied Materials & Interfaces
|
March 8, 2017
Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS<sub>2</sub> Field-Effect Transistors
Byoung Hee Moon, Gang Hee Han, Hyun Kim, et al.
Nanoscale
|
November 12, 2013
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation
Junhong Na, Min-Kyu Joo, Minju Shin, et al.
Materials Horizons
|
August 26, 2025
High-temperature negative differential resistance in tungsten diselenide multilayers without heterojunctions
Hyejin Kim, Taesoo Kim, Yeongseo Han, et al.
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of 4