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Muyao Zhang

Showing results (1-10 of 5) with videos related to

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Optics Express|August 13, 2025
Polarization grating based circular subaperture stitching interferometer insensitive to vibration and alignment errorZhen Wang, Yao Hu, Qun Hao, et al.
Optics Express|February 14, 2023
Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filterTong Jia, Muyao Zhang, Gai Zhang, et al.
Scientific Reports|December 4, 2025
A deep learning framework for predicting aircraft trajectories from sparse satellite observationsRuiyan Shan, Liquan Dong, Kang Li, et al.
Optics Express|October 7, 2021
Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodesSheng Hang, Muyao Zhang, Yidan Zhang, et al.
Optics Express|October 7, 2021
Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated conesGai Zhang, Hua Shao, Muyao Zhang, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Optics Express|August 13, 2025
Polarization grating based circular subaperture stitching interferometer insensitive to vibration and alignment errorZhen Wang, Yao Hu, Qun Hao, et al.
Optics Express|February 14, 2023
Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filterTong Jia, Muyao Zhang, Gai Zhang, et al.
Scientific Reports|December 4, 2025
A deep learning framework for predicting aircraft trajectories from sparse satellite observationsRuiyan Shan, Liquan Dong, Kang Li, et al.
Optics Express|October 7, 2021
Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodesSheng Hang, Muyao Zhang, Yidan Zhang, et al.
Optics Express|October 7, 2021
Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated conesGai Zhang, Hua Shao, Muyao Zhang, et al.
Pageof 1