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N J Curson

Showing results (1-10 of 11) with videos related to

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The Journal of Chemical Physics|July 8, 2008
Electronic effects induced by single hydrogen atoms on the Ge(001) surfaceM W Radny, G A Shah, P V Smith, et al.
Physical Review Letters|July 23, 2008
Valence surface electronic states on Ge(001)M W Radny, G A Shah, S R Schofield, et al.
The Journal of Chemical Physics|July 10, 2010
Electronic effects of single H atoms on Ge(001) revisitedG A Shah, M W Radny, P V Smith, et al.
Nature Communications|April 5, 2013
Quantum engineering at the silicon surface using dangling bondsS R Schofield, P Studer, C F Hirjibehedin, et al.
Physical Review Letters|October 4, 2003
Atomically precise placement of single dopants in siS R Schofield, N J Curson, M Y Simmons, et al.
Nanotechnology|March 24, 2015
Ba termination of Ge(001) studied with STMW Koczorowski, T Grzela, M W Radny, et al.
Nanotechnology|September 4, 2015
Growth and evolution of nickel germanide nanostructures on Ge(001)T Grzela, G Capellini, W Koczorowski, et al.
Physical Review Letters|December 17, 2004
Phosphine dissociation on the Si(001) surfaceH F Wilson, O Warschkow, N A Marks, et al.
The Journal of Chemical Physics|January 10, 2016
Reaction paths of phosphine dissociation on silicon (001)O Warschkow, N J Curson, S R Schofield, et al.
The Journal of Chemical Physics|November 21, 2007
Single P and As dopants in the Si(001) surfaceM W Radny, P V Smith, T C G Reusch, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
The Journal of Chemical Physics|July 8, 2008
Electronic effects induced by single hydrogen atoms on the Ge(001) surfaceM W Radny, G A Shah, P V Smith, et al.
Physical Review Letters|July 23, 2008
Valence surface electronic states on Ge(001)M W Radny, G A Shah, S R Schofield, et al.
The Journal of Chemical Physics|July 10, 2010
Electronic effects of single H atoms on Ge(001) revisitedG A Shah, M W Radny, P V Smith, et al.
Nature Communications|April 5, 2013
Quantum engineering at the silicon surface using dangling bondsS R Schofield, P Studer, C F Hirjibehedin, et al.
Physical Review Letters|October 4, 2003
Atomically precise placement of single dopants in siS R Schofield, N J Curson, M Y Simmons, et al.
Nanotechnology|March 24, 2015
Ba termination of Ge(001) studied with STMW Koczorowski, T Grzela, M W Radny, et al.
Nanotechnology|September 4, 2015
Growth and evolution of nickel germanide nanostructures on Ge(001)T Grzela, G Capellini, W Koczorowski, et al.
Physical Review Letters|December 17, 2004
Phosphine dissociation on the Si(001) surfaceH F Wilson, O Warschkow, N A Marks, et al.
The Journal of Chemical Physics|January 10, 2016
Reaction paths of phosphine dissociation on silicon (001)O Warschkow, N J Curson, S R Schofield, et al.
The Journal of Chemical Physics|November 21, 2007
Single P and As dopants in the Si(001) surfaceM W Radny, P V Smith, T C G Reusch, et al.
Pageof 2