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Natalia Seoane

Showing results (1-10 of 6) with videos related to

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Materials (Basel, Switzerland)|April 17, 2020
Special Issue: Nanowire Field-Effect Transistor (FET)Natalia Seoane, Antonio García-Loureiro, Karol Kalna
Materials (Basel, Switzerland)|July 31, 2019
A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETsNatalia Seoane, Daniel Nagy, Guillermo Indalecio, et al.
Plos One|July 24, 2023
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprintAntonio García-Loureiro, Natalia Seoane, Julián G Fernández, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 22, 2018
Modelling of nanoscale multi-gate transistors affected by atomistic interface roughnessDaniel Nagy, Manuel Aldegunde, Muhammad A Elmessary, et al.
Scientific Reports|November 18, 2024
A novel machine learning workflow to optimize cooling devices grounded in solid-state physicsJulian G Fernandez, Guéric Etesse, Natalia Seoane, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|July 23, 2008
Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistorsM Aldegunde, Natalia Seoane, A J García-Loureiro, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Materials (Basel, Switzerland)|April 17, 2020
Special Issue: Nanowire Field-Effect Transistor (FET)Natalia Seoane, Antonio García-Loureiro, Karol Kalna
Materials (Basel, Switzerland)|July 31, 2019
A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETsNatalia Seoane, Daniel Nagy, Guillermo Indalecio, et al.
Plos One|July 24, 2023
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprintAntonio García-Loureiro, Natalia Seoane, Julián G Fernández, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 22, 2018
Modelling of nanoscale multi-gate transistors affected by atomistic interface roughnessDaniel Nagy, Manuel Aldegunde, Muhammad A Elmessary, et al.
Scientific Reports|November 18, 2024
A novel machine learning workflow to optimize cooling devices grounded in solid-state physicsJulian G Fernandez, Guéric Etesse, Natalia Seoane, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|July 23, 2008
Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistorsM Aldegunde, Natalia Seoane, A J García-Loureiro, et al.
Pageof 1