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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Characteristics of JFET

Characteristics of JFET

Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Related Experiment Video

Updated: Jul 5, 2026

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

Special Issue: Nanowire Field-Effect Transistor (FET).

Natalia Seoane¹, Antonio García-Loureiro¹, Karol Kalna²

¹Centro Singular de Investigación en Tecnoloxías Intelixentes, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain.

Materials (Basel, Switzerland)

|April 17, 2020

Summary

This Special Issue explores recent advancements in Nanowire Field-Effect Transistors (NW-FETs), detailing their technology, physics, and modeling. Seven key articles offer insights into these nanoscale devices.

Keywords:

fabrication material properties metal gate modelling nanowire field-effect transistors variability

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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

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Last Updated: Jul 5, 2026

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Area of Science:

Materials Science
Electrical Engineering
Physics

Background:

Nanowire Field-Effect Transistors (NW-FETs) are crucial nanoscale devices with applications in electronics.
Research in NW-FETs spans fundamental physics, advanced fabrication technologies, and sophisticated modeling techniques.

Discussion:

This Special Issue compiles seven significant research articles on NW-FETs.
The articles cover diverse aspects including device performance, material properties, and operational principles.

Key Insights:

The collection highlights recent breakthroughs in NW-FET technology and physics.
It provides a comprehensive overview of the current state-of-the-art in NW-FET research.

Outlook:

Future research directions and potential applications of NW-FETs are implicitly suggested.
The issue serves as a valuable resource for scientists and engineers in the field of nanotechnology.