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Nanoscale|April 13, 2022
In operando charge transport imaging of atomically thin dopant nanostructures in siliconAlexander Kölker, Georg Gramse, Taylor J Z Stock, et al.Physical Review Letters|July 12, 2024
Spatially Resolved Dielectric Loss at the Si/SiO_{2} InterfaceMegan Cowie, Taylor J Z Stock, Procopios C Constantinou, et al.Proceedings of the National Academy of Sciences of the United States of America|October 24, 2024
Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interfaceMegan Cowie, Procopios C Constantinou, Neil J Curson, et al.ACS Nano|November 29, 2012
Site-dependent ambipolar charge states induced by group V atoms in a silicon surfacePhilipp Studer, Veronika Brázdová, Steven R Schofield, et al.Advanced Materials (Deerfield Beach, Fla.)|February 21, 2024
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice FabricationTaylor J Z Stock, Oliver Warschkow, Procopios C Constantinou, et al.Angewandte Chemie (International Ed. in English)|December 9, 2022
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) SurfaceEmily V S Hofmann, Taylor J Z Stock, Oliver Warschkow, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 6, 2013
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopyKitiphat Sinthiptharakoon, Steven R Schofield, Philipp Studer, et al.Physical Chemistry Chemical Physics : PCCP|March 5, 2013
Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopyRobert J Thompson, Sarah Fearn, Ke Jie Tan, et al.Physical Chemistry Chemical Physics : PCCP|November 17, 2016
Channels of oxygen diffusion in single crystal rubrene revealedRobert J Thompson, Thomas Bennett, Sarah Fearn, et al.Nano Letters|August 21, 2025
Imaging the Acceptor Wave Function Anisotropy in SiliconManuel Siegl, Julian Zanon, Joseph Sink, et al.Pageof 2