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Applied Optics|July 21, 2015
Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arraysPeifen Zhu, Nelson TansuScientific Reports|May 16, 2015
Conductivity of Nanowire Arrays under Random and Ordered Orientation ConfigurationsMilind Jagota, Nelson TansuScientific Reports|September 8, 2018
Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-NitridesIoannis E Fragkos, Nelson TansuScientific Reports|July 29, 2017
III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice NanostructuresWei Sun, Chee-Keong Tan, Nelson TansuScientific Reports|April 18, 2018
First-Principle Study of the Optical Properties of Dilute-P GaN1-xPx AlloysDamir Borovac, Chee-Keong Tan, Nelson TansuScientific Reports|December 13, 2017
Investigations of the Optical Properties of GaNAs Alloys by First-PrincipleDamir Borovac, Chee-Keong Tan, Nelson TansuScientific Reports|September 21, 2017
AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet OptoelectronicsWei Sun, Chee-Keong Tan, Nelson TansuApplied Optics|February 3, 2016
Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodesPeifen Zhu, Chee-Keong Tan, Wei Sun, et al.Scientific Reports|March 11, 2016
Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet EmittersChee-Keong Tan, Wei Sun, Damir Borovac, et al.Scientific Reports|February 25, 2016
Dilute-As AlNAs Alloy for Deep-Ultraviolet EmitterChee-Keong Tan, Damir Borovac, Wei Sun, et al.Pageof 4