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Scientific Reports|December 3, 2017
Physics of Efficiency Droop in GaN:Eu Light-Emitting DiodesIoannis E Fragkos, Volkmar Dierolf, Yasufumi Fujiwara, et al.
Scientific Reports|January 14, 2016
InGaN/Dilute-As GaNAs Interface Quantum Well for Red EmittersChee-Keong Tan, Damir Borovac, Wei Sun, et al.
Scientific Reports|April 15, 2016
First-Principle Electronic Properties of Dilute-P GaN(1-x)P(x) Alloy for Visible Light EmittersChee-Keong Tan, Damir Borovac, Wei Sun, et al.
Scientific Reports|February 17, 2018
Ultra-Broadband Optical Gain in III-Nitride Digital AlloysWei Sun, Chee-Keong Tan, Jonathan J Wierer, et al.
Frontiers in Bioengineering and Biotechnology|June 19, 2026
Quantitative rapid image-based method for coronary artery blood flow and wall shear stress extractionYaofeng Ju, Nelson Tansu, Peter J Psaltis, et al.
Scientific Reports|March 28, 2019
Band Anti-Crossing Model in Dilute-As GaNAs AlloysJustin C Goodrich, Damir Borovac, Chee-Keong Tan, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|June 7, 2008
Investigation of the deposition of microsphere monolayers for fabrication of microlens arraysPisist Kumnorkaew, Yik-Khoon Ee, Nelson Tansu, et al.
Scientific Reports|February 4, 2018
Publisher Correction: Crystal Orientation Dependence of Gallium Nitride WearGuosong Zeng, Wei Sun, Renbo Song, et al.
Scientific Reports|October 28, 2017
Crystal Orientation Dependence of Gallium Nitride WearGuosong Zeng, Wei Sun, Renbo Song, et al.
Biomedical Optics Express|September 1, 2017
Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic deviceYongyang Huang, Mudabbir Badar, Arthur Nitkowski, et al.
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