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Journal of the American Chemical Society
|
September 23, 2008
Highly stable organic monolayers for reacting silicon with further functionalities: the effect of the C-C bond nearest the silicon surface
Sreenivasa Reddy Puniredd, Ossama Assad, Hossam Haick
Journal of the American Chemical Society
|
June 28, 2008
Highly stable organic modification of Si(111) surfaces: towards reacting Si with further functionalities while preserving the desirable chemical properties of full Si-C atop site terminations
Sreenivasa Reddy Puniredd, Ossama Assad, Hossam Haick
ACS Applied Materials & Interfaces
|
October 23, 2013
Discriminative power of chemically sensitive silicon nanowire field effect transistors to volatile organic compounds
Rotem Ermanok, Ossama Assad, Keren Zigelboim, et al.
Langmuir : the ACS Journal of Surfaces and Colloids
|
March 24, 2011
Catalyst-free functionalization for versatile modification of nonoxidized silicon structures
Sreenivasa Reddy Puniredd, Ossama Assad, Thomas Stelzner, et al.
Journal of the American Chemical Society
|
December 26, 2008
Stable scaffolds for reacting Si nanowires with further organic functionalities while preserving Si-C passivation of surface sites
Ossama Assad, Sreenivasa Reddy Puniredd, Thomas Stelzner, et al.
ACS Nano
|
December 20, 2011
Molecular gating of silicon nanowire field-effect transistors with nonpolar analytes
Yair Paska, Thomas Stelzner, Ossama Assad, et al.
ACS Nano
|
May 5, 2012
Spray-coating route for highly aligned and large-scale arrays of nanowires
Ossama Assad, Alexander M Leshansky, Bin Wang, et al.
ACS Applied Materials & Interfaces
|
July 24, 2012
Field-effect transistors based on silicon nanowire arrays: effect of the good and the bad silicon nanowires
Bin Wang, Thomas Stelzner, Rawi Dirawi, et al.
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Search research articles
Search
Showing results (1-10 of 8) with videos related to
Sort By:
Page
of 1
Journal of the American Chemical Society
|
September 23, 2008
Highly stable organic monolayers for reacting silicon with further functionalities: the effect of the C-C bond nearest the silicon surface
Sreenivasa Reddy Puniredd, Ossama Assad, Hossam Haick
Journal of the American Chemical Society
|
June 28, 2008
Highly stable organic modification of Si(111) surfaces: towards reacting Si with further functionalities while preserving the desirable chemical properties of full Si-C atop site terminations
Sreenivasa Reddy Puniredd, Ossama Assad, Hossam Haick
ACS Applied Materials & Interfaces
|
October 23, 2013
Discriminative power of chemically sensitive silicon nanowire field effect transistors to volatile organic compounds
Rotem Ermanok, Ossama Assad, Keren Zigelboim, et al.
Langmuir : the ACS Journal of Surfaces and Colloids
|
March 24, 2011
Catalyst-free functionalization for versatile modification of nonoxidized silicon structures
Sreenivasa Reddy Puniredd, Ossama Assad, Thomas Stelzner, et al.
Journal of the American Chemical Society
|
December 26, 2008
Stable scaffolds for reacting Si nanowires with further organic functionalities while preserving Si-C passivation of surface sites
Ossama Assad, Sreenivasa Reddy Puniredd, Thomas Stelzner, et al.
ACS Nano
|
December 20, 2011
Molecular gating of silicon nanowire field-effect transistors with nonpolar analytes
Yair Paska, Thomas Stelzner, Ossama Assad, et al.
ACS Nano
|
May 5, 2012
Spray-coating route for highly aligned and large-scale arrays of nanowires
Ossama Assad, Alexander M Leshansky, Bin Wang, et al.
ACS Applied Materials & Interfaces
|
July 24, 2012
Field-effect transistors based on silicon nanowire arrays: effect of the good and the bad silicon nanowires
Bin Wang, Thomas Stelzner, Rawi Dirawi, et al.
Page
of 1