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ACS Nano|January 24, 2024
Patternable Process-Induced Strain in 2D Monolayers and HeterobilayersYue Zhang, M Abir Hossain, Kelly J Hwang, et al.
Proceedings of the National Academy of Sciences of the United States of America|November 8, 2012
Fluctuation broadening in carbon nanotube resonatorsArthur W Barnard, Vera Sazonova, Arend M van der Zande, et al.
ACS Nano|April 14, 2023
Bend-Induced Ferroelectric Domain Walls in α-In2Se3Edmund Han, Shahriar Muhammad Nahid, Tawfiqur Rakib, et al.
ACS Nano|April 30, 2024
Ultrathin and Deformable Graphene Etch Mask for Fabrication of 3D MicrostructuresJiwoo Kim, Donghoon Moon, Hyunchul Kim, et al.
Advanced Electronic Materials|August 8, 2025
Extension Doping with Low-Resistance Contacts for P-Type Monolayer WSe2 Field-Effect TransistorsSihan Chen, Yue Zhang, William P King, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 18, 2024
Edge-Passivated Monolayer WSe2 Nanoribbon TransistorsSihan Chen, Yue Zhang, William P King, et al.
ACS Nano|May 3, 2024
Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced StrainYue Zhang, He Lin Zhao, Siyuan Huang, et al.
ACS Nano|May 31, 2019
A Scalable, Solution-Based Approach to Tuning the Solubility and Improving the Photoluminescence of Chemically Exfoliated MoS2Myung Jin Park, Steven Gravelsins, Jangyup Son, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 8, 2019
Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene CompoundsJangyup Son, Nikita Buzov, Sihan Chen, et al.
Nano Letters|December 30, 2009
Photo-thermoelectric effect at a graphene interface junctionXiaodong Xu, Nathaniel M Gabor, Jonathan S Alden, et al.
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