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Nano Letters|October 1, 2024
Wafer-Scale Atomic Layer-Deposited TeO/Te Heterostructure P-Type Thin-Film TransistorsPukun Tan, Chang Niu, Zehao Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)|April 8, 2025
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D TelluriumChang Niu, Linjia Long, Yizhi Zhang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 17, 2018
Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin FilmsGang Qiu, Qiong Nian, Maithilee Motlag, et al.
ACS Nano|December 20, 2013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriersHan Liu, Mengwei Si, Yexin Deng, et al.
Nano Letters|December 29, 2020
Why In2O3 Can Make 0.7 nm Atomic Layer Thin TransistorsMengwei Si, Yaoqiao Hu, Zehao Lin, et al.
ACS Omega|August 29, 2019
How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?Lingming Yang, Adam Charnas, Gang Qiu, et al.
Nature Communications|June 5, 2026
Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometryMarcello B Silva Neto, Chang Niu, Marcus V O Moutinho, et al.
Nano Letters|December 15, 2016
Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer DepositionXiabing Lou, Hong Zhou, Sang Bok Kim, et al.
ACS Nano|July 15, 2014
Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diodeYexin Deng, Zhe Luo, Nathan J Conrad, et al.
Nano Letters|December 15, 2016
Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5Gang Qiu, Yuchen Du, Adam Charnas, et al.
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