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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Wafer-Scale Atomic Layer-Deposited TeO/Te Heterostructure P-Type Thin-Film Transistors
Pukun Tan1,2, Chang Niu1,2, Zehao Lin1,2
1Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
Nano Letters
|October 1, 2024
Summary
Atomic layer-deposited tellurium (Te) oxide/Te heterostructures offer scalable p-type semiconductor solutions. This research demonstrates their wafer-scale uniformity and integration compatibility for advanced electronics.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Growing demand for p-type semiconductors compatible with back-end-of-line (BEOL) processes.
- Tellurium (Te) shows promise due to electrical properties and low-temperature processing potential.
- Current scalable Te integration relies on physical vapor deposition.
Purpose of the Study:
- To demonstrate wafer-scale atomic layer-deposited (ALD) TeO2/Te heterostructure thin-film transistors.
- To assess uniformity and integration compatibility for complementary metal oxide semiconductor (CMOS) technology.
- To investigate the mechanism for ohmic contact formation.
Main Methods:
- Atomic Layer Deposition (ALD) for TeO2/Te heterostructures.
- Wafer-scale fabrication and characterization.
- Spatial Raman spectroscopy and electrical analysis.
- Band alignment analysis.
Main Results:
- Demonstrated wafer-scale uniformity of ALD TeO2/Te films.
- Achieved high integration compatibility for BEOL applications.
- Observed good ohmic contact due to surface accumulation and unique band alignment.
- Successful integration with n-type ALD oxide semiconductors.
Conclusions:
- ALD TeO2/Te is a viable p-type semiconductor for scalable, uniform thin-film transistors.
- The material shows excellent potential for monolithic 3D integration in BEOL CMOS.
- The findings pave the way for advanced semiconductor device fabrication.
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