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Peter M Smowton

Showing results (1-10 of 5) with videos related to

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Optics Express|April 4, 2015
Radiative recombination rate measurement by the optically pumped variable stripe length methodRobert Thomas, Peter M Smowton, Peter Blood
Optics Express|October 20, 2015
InAsP quantum dot lasers grown by MOVPEIvan Karomi, Peter M Smowton, Samuel Shutts, et al.
Scientific Reports|March 17, 2026
Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductorsMoein Shamoushaki, Josie Travers-Nabialek, Sara-Jayne Gillgrass, et al.
Optics Express|May 4, 2016
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substratesJonathan R Orchard, Samuel Shutts, Angela Sobiesierski, et al.
Optics Express|July 30, 2025
MOCVD-grown InAs/InP quantum dot lasers with low threshold currentZhao Yan, Shangfeng Liu, Bogdan-Petrin Ratiu, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Optics Express|April 4, 2015
Radiative recombination rate measurement by the optically pumped variable stripe length methodRobert Thomas, Peter M Smowton, Peter Blood
Optics Express|October 20, 2015
InAsP quantum dot lasers grown by MOVPEIvan Karomi, Peter M Smowton, Samuel Shutts, et al.
Scientific Reports|March 17, 2026
Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductorsMoein Shamoushaki, Josie Travers-Nabialek, Sara-Jayne Gillgrass, et al.
Optics Express|May 4, 2016
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substratesJonathan R Orchard, Samuel Shutts, Angela Sobiesierski, et al.
Optics Express|July 30, 2025
MOCVD-grown InAs/InP quantum dot lasers with low threshold currentZhao Yan, Shangfeng Liu, Bogdan-Petrin Ratiu, et al.
Pageof 1