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Journal of Nanoscience and Nanotechnology|November 22, 2011
A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitorsA W Groenland, R A M Wolters, A Y Kovalgin, et al.Nature Materials|March 15, 2005
Low-cost and nanoscale non-volatile memory concept for future silicon chipsMartijn H R Lankhorst, Bas W S M M Ketelaars, R A M WoltersJournal of Nanoscience and Nanotechnology|November 22, 2011
Ultra-thin atomic layer deposited TiN films: non-linear I-V behaviour and the importance of surface passivationH Van Bui, A A I Aarnink, A Y Kovalgin, et al.Pageof 1