Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Rainer Waser

Showing results (31-40 of 102) with videos related to

Pageof 11
Sort By:
Nanoscale|September 28, 2019
On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devicesAndreas Kindsmüller, Alexander Meledin, Joachim Mayer, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|March 21, 2008
Striped phase of mercaptoalkylferrocenes on Au(111) with a potential for nanoscale surface patterningLars Müller-Meskamp, Silvia Karthäuser, Rainer Waser, et al.
Scientific Reports|November 12, 2016
Multistate Memristive Tantalum Oxide Devices for Ternary ArithmeticWonjoo Kim, Anupam Chattopadhyay, Anne Siemon, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 23, 2012
Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3Marcel Schie, Astrid Marchewka, Thomas Müller, et al.
Scientific Reports|October 5, 2013
Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architecturesJan van den Hurk, Viktor Havel, Eike Linn, et al.
Nanotechnology|October 1, 2014
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switchesJan van den Hurk, Eike Linn, Hehe Zhang, et al.
Nanotechnology|September 26, 2015
Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switchesThomas Breuer, Anne Siemon, Eike Linn, et al.
Scientific Reports|April 6, 2016
Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive DevicesThomas Breuer, Lutz Nielen, Bernd Roesgen, et al.
Scientific Reports|July 20, 2018
Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devicesKatharina Skaja, Michael Andrä, Vikas Rana, et al.
Physical Chemistry Chemical Physics : PCCP|July 8, 2010
Electronic transport properties of individual 4,4'-bis(mercaptoalkyl)-biphenyl derivatives measured in STM-based break junctionsAdam Busiakiewicz, Silvia Karthäuser, Melanie Homberger, et al.
Pageof 11

Showing results (31-40 of 102) with videos related to

Sort By:
Pageof 11
Nanoscale|September 28, 2019
On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devicesAndreas Kindsmüller, Alexander Meledin, Joachim Mayer, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|March 21, 2008
Striped phase of mercaptoalkylferrocenes on Au(111) with a potential for nanoscale surface patterningLars Müller-Meskamp, Silvia Karthäuser, Rainer Waser, et al.
Scientific Reports|November 12, 2016
Multistate Memristive Tantalum Oxide Devices for Ternary ArithmeticWonjoo Kim, Anupam Chattopadhyay, Anne Siemon, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 23, 2012
Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3Marcel Schie, Astrid Marchewka, Thomas Müller, et al.
Scientific Reports|October 5, 2013
Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architecturesJan van den Hurk, Viktor Havel, Eike Linn, et al.
Nanotechnology|October 1, 2014
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switchesJan van den Hurk, Eike Linn, Hehe Zhang, et al.
Nanotechnology|September 26, 2015
Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switchesThomas Breuer, Anne Siemon, Eike Linn, et al.
Scientific Reports|April 6, 2016
Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive DevicesThomas Breuer, Lutz Nielen, Bernd Roesgen, et al.
Scientific Reports|July 20, 2018
Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devicesKatharina Skaja, Michael Andrä, Vikas Rana, et al.
Physical Chemistry Chemical Physics : PCCP|July 8, 2010
Electronic transport properties of individual 4,4'-bis(mercaptoalkyl)-biphenyl derivatives measured in STM-based break junctionsAdam Busiakiewicz, Silvia Karthäuser, Melanie Homberger, et al.
Pageof 11