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Ruge Quhe

Showing results (31-40 of 38) with videos related to

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ACS Applied Materials & Interfaces|May 16, 2022
Performance Limit of Ultrathin GaAs TransistorsQiuhui Li, Shibo Fang, Shiqi Liu, et al.
Nanoscale|January 7, 2015
Graphdiyne-metal contacts and graphdiyne transistorsYuanyuan Pan, Yangyang Wang, Lu Wang, et al.
Nanoscale|July 15, 2021
Improvement of alkali metal ion batteries via interlayer engineering of anodes: from graphite to grapheneJiachen Ma, Chen Yang, Xinjie Ma, et al.
Nanoscale|December 16, 2015
Does p-type ohmic contact exist in WSe2-metal interfaces?Yangyang Wang, Ruo Xi Yang, Ruge Quhe, et al.
ACS Applied Materials & Interfaces|January 11, 2017
Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?Ruge Quhe, Xiyou Peng, Yuanyuan Pan, et al.
ACS Applied Materials & Interfaces|June 20, 2018
Many-Body Effect and Device Performance Limit of Monolayer InSeYangyang Wang, Ruixiang Fei, Ruge Quhe, et al.
Physical Chemistry Chemical Physics : PCCP|November 4, 2020
Gate-tunable high magnetoresistance in monolayer Fe<sub>3</sub>GeTe<sub>2</sub> spin valvesJie Yang, Ruge Quhe, Shiqi Liu, et al.
Reports on Progress in Physics. Physical Society (Great Britain)|March 24, 2021
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experimentYangyang Wang, Shiqi Liu, Qiuhui Li, et al.
Pageof 4

Showing results (31-40 of 38) with videos related to

Sort By:
Pageof 4
You have reached the last page of results.This site can display upto 38 results.
ACS Applied Materials & Interfaces|May 16, 2022
Performance Limit of Ultrathin GaAs TransistorsQiuhui Li, Shibo Fang, Shiqi Liu, et al.
Nanoscale|January 7, 2015
Graphdiyne-metal contacts and graphdiyne transistorsYuanyuan Pan, Yangyang Wang, Lu Wang, et al.
Nanoscale|July 15, 2021
Improvement of alkali metal ion batteries via interlayer engineering of anodes: from graphite to grapheneJiachen Ma, Chen Yang, Xinjie Ma, et al.
Nanoscale|December 16, 2015
Does p-type ohmic contact exist in WSe2-metal interfaces?Yangyang Wang, Ruo Xi Yang, Ruge Quhe, et al.
ACS Applied Materials & Interfaces|January 11, 2017
Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?Ruge Quhe, Xiyou Peng, Yuanyuan Pan, et al.
ACS Applied Materials & Interfaces|June 20, 2018
Many-Body Effect and Device Performance Limit of Monolayer InSeYangyang Wang, Ruixiang Fei, Ruge Quhe, et al.
Physical Chemistry Chemical Physics : PCCP|November 4, 2020
Gate-tunable high magnetoresistance in monolayer Fe<sub>3</sub>GeTe<sub>2</sub> spin valvesJie Yang, Ruge Quhe, Shiqi Liu, et al.
Reports on Progress in Physics. Physical Society (Great Britain)|March 24, 2021
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experimentYangyang Wang, Shiqi Liu, Qiuhui Li, et al.
Pageof 4