Search research articles
Contact Us
Filters
Showing results (31-40 of 127) with videos related to
Page
of 13
Sort By:
Shi Yan Sheng Wu Xue Bao
|
January 29, 2003
[Analysis of the binding of GATA factors to the regulatory elements of human beta-globin gene in hydroxyurea-induced and uninduced HEL cells]
H Zhao, S B Zhang, S Jiang, et al.
The Journal of Chemical Physics
|
December 3, 2008
Accurate and efficient calculation of van der Waals interactions within density functional theory by local atomic potential approach
Y Y Sun, Yong-Hyun Kim, Kyuho Lee, et al.
Scientific Reports
|
April 15, 2016
Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices
Junhyeok Bang, Y Y Sun, Jung-Hoon Song, et al.
Nanotechnology
|
May 9, 2009
Computational studies on hydrogen storage in aluminum nitride nanowires/tubes
Yafei Li, Zhen Zhou, Panwen Shen, et al.
Physical Review Letters
|
June 1, 2004
Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide
Sukit Limpijumnong, S B Zhang, Su-Huai Wei, et al.
Zhonghua Gan Zang Bing Za Zhi = Zhonghua Ganzangbing Zazhi = Chinese Journal of Hepatology
|
October 15, 2020
[Application and status of digestive endoscopy in the overall management of portal hypertension-related esophagogastric variceal bleeding]
L Li, S B Zhang, Y N Zhang, et al.
Journal of Computational Chemistry
|
April 18, 2009
First-principles study of molecular hydrogen dissociation on doped Al12X (X = B, Al, C, Si, P, Mg, and Ca) clusters
Lu Wang, Jijun Zhao, Zhen Zhou, et al.
Physical Review Letters
|
February 7, 2007
Bistability-mediated carrier recombination at light-induced boron-oxygen complexes in silicon
Mao-Hua Du, Howard M Branz, Richard S Crandall, et al.
Physical Review Letters
|
November 3, 2001
Steps on As-terminated Ge(001) revisited: theory versus experiment
S B Zhang, W E McMahon, J M Olson, et al.
Physical Review Letters
|
February 7, 2003
Growth model for atomic ordering: the case for quadruple-period ordering in GaAsSb alloys
Iskander G Batyrev, Andrew G Norman, S B Zhang, et al.
Page
of 13
Search research articles
Search
Showing results (31-40 of 127) with videos related to
Sort By:
Page
of 13
Shi Yan Sheng Wu Xue Bao
|
January 29, 2003
[Analysis of the binding of GATA factors to the regulatory elements of human beta-globin gene in hydroxyurea-induced and uninduced HEL cells]
H Zhao, S B Zhang, S Jiang, et al.
The Journal of Chemical Physics
|
December 3, 2008
Accurate and efficient calculation of van der Waals interactions within density functional theory by local atomic potential approach
Y Y Sun, Yong-Hyun Kim, Kyuho Lee, et al.
Scientific Reports
|
April 15, 2016
Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices
Junhyeok Bang, Y Y Sun, Jung-Hoon Song, et al.
Nanotechnology
|
May 9, 2009
Computational studies on hydrogen storage in aluminum nitride nanowires/tubes
Yafei Li, Zhen Zhou, Panwen Shen, et al.
Physical Review Letters
|
June 1, 2004
Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide
Sukit Limpijumnong, S B Zhang, Su-Huai Wei, et al.
Zhonghua Gan Zang Bing Za Zhi = Zhonghua Ganzangbing Zazhi = Chinese Journal of Hepatology
|
October 15, 2020
[Application and status of digestive endoscopy in the overall management of portal hypertension-related esophagogastric variceal bleeding]
L Li, S B Zhang, Y N Zhang, et al.
Journal of Computational Chemistry
|
April 18, 2009
First-principles study of molecular hydrogen dissociation on doped Al12X (X = B, Al, C, Si, P, Mg, and Ca) clusters
Lu Wang, Jijun Zhao, Zhen Zhou, et al.
Physical Review Letters
|
February 7, 2007
Bistability-mediated carrier recombination at light-induced boron-oxygen complexes in silicon
Mao-Hua Du, Howard M Branz, Richard S Crandall, et al.
Physical Review Letters
|
November 3, 2001
Steps on As-terminated Ge(001) revisited: theory versus experiment
S B Zhang, W E McMahon, J M Olson, et al.
Physical Review Letters
|
February 7, 2003
Growth model for atomic ordering: the case for quadruple-period ordering in GaAsSb alloys
Iskander G Batyrev, Andrew G Norman, S B Zhang, et al.
Page
of 13