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Sandro Rao

Showing results (1-10 of 7) with videos related to

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Sensors (Basel, Switzerland)|January 12, 2016
Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS PhotonicsSandro Rao, Giovanni Pangallo, Francesco Giuseppe Della Corte
Optics Express|March 4, 2011
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding deviceFrancesco G Della Corte, Sandro Rao, Giuseppe Coppola, et al.
Optics Express|April 27, 2012
A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:HSandro Rao, Giuseppe Coppola, Mariano A Gioffrè, et al.
Optics Express|June 12, 2008
Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacksFrancesco G Della Corte, Sandro Rao, Maria A Nigro, et al.
Scientific Reports|March 22, 2022
Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nmSandro Rao, Elisa D Mallemace, Giuseppe Cocorullo, et al.
Scientific Reports|June 23, 2023
Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nmSandro Rao, Elisa D Mallemace, Giuliana Faggio, et al.
Sensors (Basel, Switzerland)|May 5, 2021
A Technique for Improving the Precision of the Direct Measurement of Junction Temperature in Power Light-Emitting DiodesDemetrio Iero, Massimo Merenda, Riccardo Carotenuto, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Sensors (Basel, Switzerland)|January 12, 2016
Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS PhotonicsSandro Rao, Giovanni Pangallo, Francesco Giuseppe Della Corte
Optics Express|March 4, 2011
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding deviceFrancesco G Della Corte, Sandro Rao, Giuseppe Coppola, et al.
Optics Express|April 27, 2012
A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:HSandro Rao, Giuseppe Coppola, Mariano A Gioffrè, et al.
Optics Express|June 12, 2008
Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacksFrancesco G Della Corte, Sandro Rao, Maria A Nigro, et al.
Scientific Reports|March 22, 2022
Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nmSandro Rao, Elisa D Mallemace, Giuseppe Cocorullo, et al.
Scientific Reports|June 23, 2023
Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nmSandro Rao, Elisa D Mallemace, Giuliana Faggio, et al.
Sensors (Basel, Switzerland)|May 5, 2021
A Technique for Improving the Precision of the Direct Measurement of Junction Temperature in Power Light-Emitting DiodesDemetrio Iero, Massimo Merenda, Riccardo Carotenuto, et al.
Pageof 1