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Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.
Sandro Rao1, Giovanni Pangallo2, Francesco Giuseppe Della Corte3
1Department of Information Engineering Infrastructures and Sustainable Energy (DIIES), "Mediterranea" University, Reggio Calabria 89122, Italy. sandro.rao@unirc.it.
Sensors (Basel, Switzerland)
|January 12, 2016
Summary
A novel hydrogenated amorphous silicon (a-Si:H) p-i-n diode temperature sensor offers high sensitivity for silicon photonics. This device enables continuous thermal monitoring of microelectronic and photonic integrated circuits.
Area of Science:
- Optoelectronics
- Materials Science
- Photonics
Background:
- Hydrogenated amorphous silicon (a-Si:H) possesses advantageous optoelectronic properties.
- a-Si:H is compatible with standard microelectronic fabrication processes.
- Micro-photonic devices require precise thermal management.
Purpose of the Study:
- To present a temperature sensor utilizing a-Si:H.
- To integrate this sensor into an optical waveguide for silicon photonics.
- To enable continuous temperature monitoring of integrated circuits.
Main Methods:
- Fabrication of a hydrogenated amorphous silicon p-i-n diode.
- Integration of the diode into an optical waveguide.
- Characterization of the diode's voltage drop dependence on temperature (30 °C to 170 °C).
Main Results:
- A linear relationship was observed between voltage drop and temperature.
- High sensitivity of 11.9 mV/°C was achieved.
- Optimal performance was noted in the bias current range of 34-40 nA.
Conclusions:
- The a-Si:H p-i-n diode is a viable component for thermal sensing in silicon photonics.
- The sensor is suitable for monitoring CMOS-compatible photonic integrated circuits.
- Accurate temperature monitoring is crucial for the performance of on-chip devices.
