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Sannian Song

Showing results (1-10 of 43) with videos related to

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ACS Applied Materials & Interfaces|November 22, 2019
Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change MemoryLong Zheng, Wenxiong Song, Zhitang Song, et al.
Nano-Micro Letters|June 17, 2021
Ta-Doped Sb<sub>2</sub>Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation CharacteristicsYuan Xue, Shuai Yan, Shilong Lv, et al.
Micromachines|July 29, 2023
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature CompensationZhizhi Chen, Qian Wang, Xi Li, et al.
Nanoscale|April 10, 2018
Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memoryWeihua Wu, Zihan Zhao, Bo Shen, et al.
Nanomaterials (Basel, Switzerland)|February 25, 2023
Advantages of Ta-Doped Sb<sub>3</sub>Te<sub>1</sub> Materials for Phase Change Memory ApplicationsMingyue Shao, Yang Qiao, Yuan Xue, et al.
Nanotechnology|November 3, 2021
Non-volatile multi-level cell storage via sequential phase transition in Sb<sub>7</sub>Te<sub>3</sub>/GeSb<sub>6</sub>Te multilayer thin filmZhehao Xu, Xiao Su, Sicong Hua, et al.
Materials (Basel, Switzerland)|July 2, 2021
Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAMZhenzhong Zhang, Fang Wang, Kai Hu, et al.
Nanomaterials (Basel, Switzerland)|June 24, 2022
Pt Modified Sb<sub>2</sub>Te<sub>3</sub> Alloy Ensuring High-Performance Phase Change MemoryYang Qiao, Jin Zhao, Haodong Sun, et al.
Journal of Nanoscience and Nanotechnology|May 8, 2013
Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memoryYegang Lu, Simian Li, Sannian Song, et al.
Nanotechnology|September 13, 2017
Multi-level storage and ultra-high speed of superlattice-like Ge<sub>50</sub>Te<sub>50</sub>/Ge<sub>8</sub>Sb<sub>92</sub> thin film for phase-change memory applicationWeihua Wu, Shiyu Chen, Jiwei Zhai, et al.
Pageof 5

Showing results (1-10 of 43) with videos related to

Sort By:
Pageof 5
ACS Applied Materials & Interfaces|November 22, 2019
Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change MemoryLong Zheng, Wenxiong Song, Zhitang Song, et al.
Nano-Micro Letters|June 17, 2021
Ta-Doped Sb<sub>2</sub>Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation CharacteristicsYuan Xue, Shuai Yan, Shilong Lv, et al.
Micromachines|July 29, 2023
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature CompensationZhizhi Chen, Qian Wang, Xi Li, et al.
Nanoscale|April 10, 2018
Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memoryWeihua Wu, Zihan Zhao, Bo Shen, et al.
Nanomaterials (Basel, Switzerland)|February 25, 2023
Advantages of Ta-Doped Sb<sub>3</sub>Te<sub>1</sub> Materials for Phase Change Memory ApplicationsMingyue Shao, Yang Qiao, Yuan Xue, et al.
Nanotechnology|November 3, 2021
Non-volatile multi-level cell storage via sequential phase transition in Sb<sub>7</sub>Te<sub>3</sub>/GeSb<sub>6</sub>Te multilayer thin filmZhehao Xu, Xiao Su, Sicong Hua, et al.
Materials (Basel, Switzerland)|July 2, 2021
Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAMZhenzhong Zhang, Fang Wang, Kai Hu, et al.
Nanomaterials (Basel, Switzerland)|June 24, 2022
Pt Modified Sb<sub>2</sub>Te<sub>3</sub> Alloy Ensuring High-Performance Phase Change MemoryYang Qiao, Jin Zhao, Haodong Sun, et al.
Journal of Nanoscience and Nanotechnology|May 8, 2013
Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memoryYegang Lu, Simian Li, Sannian Song, et al.
Nanotechnology|September 13, 2017
Multi-level storage and ultra-high speed of superlattice-like Ge<sub>50</sub>Te<sub>50</sub>/Ge<sub>8</sub>Sb<sub>92</sub> thin film for phase-change memory applicationWeihua Wu, Shiyu Chen, Jiwei Zhai, et al.
Pageof 5