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Nanotechnology|August 22, 2019
One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devicesSeokjae Lim, Myounghoon Kwak, Hyunsang Hwang
Nanotechnology|March 1, 2019
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systemsJongwon Lee, Seokjae Lim, Myonghoon Kwak, et al.
Scientific Reports|December 19, 2025
Role of the channel on the memory window of HfZrOx ferroelectric field-effect transistors with p-type Si-doped InZnOx channelHyoungjin Park, Seokjae Lim, Somi Lee, et al.
Nanotechnology|February 25, 2020
Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivityJongwon Lee, Revannath Dnyandeo Nikam, Seokjae Lim, et al.
Nanotechnology|February 17, 2017
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memoryFekadu Gochole Aga, Jiyong Woo, Jeonghwan Song, et al.
Nanotechnology|January 13, 2018
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic systemChanghyuck Sung, Seokjae Lim, Hyungjun Kim, et al.
Nanotechnology|April 11, 2019
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changesJaesung Park, Chuljun Lee, Myunghoon Kwak, et al.
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