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Journal of Nanoscience and Nanotechnology
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March 5, 2020
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor
Yongjin Jeong, In Man Kang, Seongjae Cho, et al.
The Journal of Chemical Physics
|
November 14, 2023
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
Chandreswar Mahata, Hyojin So, Seyeong Yang, et al.
ACS Omega
|
December 8, 2025
A Fully Si-Compatible Ni/Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>/<i>p</i> <sup>+</sup> Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications
Yeji Lee, Soomin Kim, Seongmin Kim, et al.
Micromachines
|
February 28, 2020
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Hyeonjeong Kim, Songyi Yoo, In-Man Kang, et al.
Scientific Reports
|
March 10, 2022
Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing
Srikrishna Sagar, Kannan Udaya Mohanan, Seongjae Cho, et al.
Micromachines
|
April 23, 2022
Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
Inyoung Lee, Hyojin Park, Quan The Nguyen, et al.
Journal of Nanoscience and Nanotechnology
|
November 26, 2013
Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions
Sung Yun Woo, Young Jun Yoon, Seongjae Cho, et al.
Journal of Nanoscience and Nanotechnology
|
April 28, 2019
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.
Micromachines
|
November 9, 2018
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications
Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, et al.
Journal of Nanoscience and Nanotechnology
|
January 5, 2016
Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.
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Search research articles
Search
Showing results (11-20 of 39) with videos related to
Sort By:
Page
of 4
Journal of Nanoscience and Nanotechnology
|
March 5, 2020
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor
Yongjin Jeong, In Man Kang, Seongjae Cho, et al.
The Journal of Chemical Physics
|
November 14, 2023
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
Chandreswar Mahata, Hyojin So, Seyeong Yang, et al.
ACS Omega
|
December 8, 2025
A Fully Si-Compatible Ni/Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>/<i>p</i> <sup>+</sup> Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications
Yeji Lee, Soomin Kim, Seongmin Kim, et al.
Micromachines
|
February 28, 2020
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Hyeonjeong Kim, Songyi Yoo, In-Man Kang, et al.
Scientific Reports
|
March 10, 2022
Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing
Srikrishna Sagar, Kannan Udaya Mohanan, Seongjae Cho, et al.
Micromachines
|
April 23, 2022
Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
Inyoung Lee, Hyojin Park, Quan The Nguyen, et al.
Journal of Nanoscience and Nanotechnology
|
November 26, 2013
Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions
Sung Yun Woo, Young Jun Yoon, Seongjae Cho, et al.
Journal of Nanoscience and Nanotechnology
|
April 28, 2019
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.
Micromachines
|
November 9, 2018
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications
Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, et al.
Journal of Nanoscience and Nanotechnology
|
January 5, 2016
Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.
Page
of 4