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Scientific Reports
|
April 11, 2018
Palladium gates for reproducible quantum dots in silicon
Matthias Brauns, Sergey V Amitonov, Paul-Christiaan Spruijtenburg, et al.
Nanotechnology
|
February 1, 2018
A fabrication guide for planar silicon quantum dot heterostructures
Paul C Spruijtenburg, Sergey V Amitonov, Wilfred G van der Wiel, et al.
Scientific Reports
|
December 7, 2016
Passivation and characterization of charge defects in ambipolar silicon quantum dots
Paul C Spruijtenburg, Sergey V Amitonov, Filipp Mueller, et al.
Beilstein Journal of Nanotechnology
|
June 15, 2013
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
Denis E Presnov, Sergey V Amitonov, Pavel A Krutitskii, et al.
Nature Communications
|
March 14, 2023
Reducing charge noise in quantum dots by using thin silicon quantum wells
Brian Paquelet Wuetz, Davide Degli Esposti, Anne-Marije J Zwerver, et al.
Nature
|
January 17, 2020
Classification with a disordered dopant-atom network in silicon
Tao Chen, Jeroen van Gelder, Bram van de Ven, et al.
Nature
|
September 28, 2022
Universal control of a six-qubit quantum processor in silicon
Stephan G J Philips, Mateusz T Mądzik, Sergey V Amitonov, et al.
Nature Nanotechnology
|
June 9, 2025
High-fidelity single-spin shuttling in silicon
Maxim De Smet, Yuta Matsumoto, Anne-Marije J Zwerver, et al.
Nature Communications
|
December 13, 2022
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P Losert, Sebastian Koelling, et al.
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Search research articles
Search
Showing results (1-10 of 9) with videos related to
Sort By:
Page
of 1
Scientific Reports
|
April 11, 2018
Palladium gates for reproducible quantum dots in silicon
Matthias Brauns, Sergey V Amitonov, Paul-Christiaan Spruijtenburg, et al.
Nanotechnology
|
February 1, 2018
A fabrication guide for planar silicon quantum dot heterostructures
Paul C Spruijtenburg, Sergey V Amitonov, Wilfred G van der Wiel, et al.
Scientific Reports
|
December 7, 2016
Passivation and characterization of charge defects in ambipolar silicon quantum dots
Paul C Spruijtenburg, Sergey V Amitonov, Filipp Mueller, et al.
Beilstein Journal of Nanotechnology
|
June 15, 2013
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
Denis E Presnov, Sergey V Amitonov, Pavel A Krutitskii, et al.
Nature Communications
|
March 14, 2023
Reducing charge noise in quantum dots by using thin silicon quantum wells
Brian Paquelet Wuetz, Davide Degli Esposti, Anne-Marije J Zwerver, et al.
Nature
|
January 17, 2020
Classification with a disordered dopant-atom network in silicon
Tao Chen, Jeroen van Gelder, Bram van de Ven, et al.
Nature
|
September 28, 2022
Universal control of a six-qubit quantum processor in silicon
Stephan G J Philips, Mateusz T Mądzik, Sergey V Amitonov, et al.
Nature Nanotechnology
|
June 9, 2025
High-fidelity single-spin shuttling in silicon
Maxim De Smet, Yuta Matsumoto, Anne-Marije J Zwerver, et al.
Nature Communications
|
December 13, 2022
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P Losert, Sebastian Koelling, et al.
Page
of 1