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Shao-Heng Yang

Showing results (1-10 of 4) with videos related to

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Nano Letters|March 31, 2025
Improved Hysteresis of High-Performance p-Type WSe<sub>2</sub> Transistors with Native Oxide WO<sub></sub> Interfacial LayerHao-Yu Lan, Yuanqiu Tan, Shao-Heng Yang, et al.
Nature Communications|May 5, 2025
Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe<sub>2</sub> transistorsHao-Yu Lan, Chih-Pin Lin, Lina Liu, et al.
Nature Communications|June 10, 2026
Scaling two-dimensional semiconductor nanoribbons for high-performance electronicsHao-Yu Lan, Shao-Heng Yang, Yongjae Cho, et al.
ACS Nano|February 27, 2025
Monolayer WSe<sub>2</sub> Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and PassivationYuanqiu Tan, Shao-Heng Yang, Chih-Pin Lin, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Nano Letters|March 31, 2025
Improved Hysteresis of High-Performance p-Type WSe<sub>2</sub> Transistors with Native Oxide WO<sub></sub> Interfacial LayerHao-Yu Lan, Yuanqiu Tan, Shao-Heng Yang, et al.
Nature Communications|May 5, 2025
Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe<sub>2</sub> transistorsHao-Yu Lan, Chih-Pin Lin, Lina Liu, et al.
Nature Communications|June 10, 2026
Scaling two-dimensional semiconductor nanoribbons for high-performance electronicsHao-Yu Lan, Shao-Heng Yang, Yongjae Cho, et al.
ACS Nano|February 27, 2025
Monolayer WSe<sub>2</sub> Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and PassivationYuanqiu Tan, Shao-Heng Yang, Chih-Pin Lin, et al.
Pageof 1