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National Science Review|February 5, 2024
Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?Shujuan Mao, Guilei Wang, Chao ZhaoNanomaterials (Basel, Switzerland)|November 11, 2022
A Voltage-Modulated Nanostrip Spin-Wave Filter and Spin Logic Device ThereofHuihui Li, Bowen Dong, Qi Hu, et al.Nanomaterials (Basel, Switzerland)|April 12, 2022
Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential IntegrationShujuan Mao, Jianfeng Gao, Xiaobin He, et al.Nano Letters|March 13, 2026
In Situ Engineering of Vertical Indium Gradients via Sputtering Kinetics for High-Performance IGZO Channel-All-Around TransistorsJiabao Sun, Wei Yu, Jing Zhang, et al.Nanomaterials (Basel, Switzerland)|June 24, 2022
Special Issue: Silicon NanodevicesHenry H Radamson, Guilei WangNanomaterials (Basel, Switzerland)|June 13, 2024
Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last ProcessXiaohui Zhu, Lei Cao, Guilei Wang, et al.Nanoscale Research Letters|April 29, 2017
pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS TechnologyGuilei Wang, Jun Luo, Jinbiao Liu, et al.Nanomaterials (Basel, Switzerland)|November 24, 2023
The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral StacksPeng Zhao, Lei Cao, Guilei Wang, et al.Nanomaterials (Basel, Switzerland)|April 13, 2023
Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement TechniqueHao Chang, Guilei Wang, Hong Yang, et al.Science (New York, N.Y.)|February 13, 2025
Depth-dependent seismic sensing of groundwater recovery from the atmospheric-river storms of 2023Shujuan Mao, William L Ellsworth, Yujie Zheng, et al.Pageof 188