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Shunpeng Lu

Showing results (1-10 of 10) with videos related to

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Frontiers in Chemistry|February 12, 2021
Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall ArchitectureYiping Zhang, Shunpeng Lu, Ying Qiu, et al.
Frontiers in Chemistry|April 5, 2021
Strain-Reduced Micro-LEDs Grown Directly Using Partitioned GrowthShunpeng Lu, Yiping Zhang, Zi-Hui Zhang, et al.
Optics Letters|June 15, 2023
Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structureNianlei Jiang, Yang Chen, Bingchen Lv, et al.
Optics Letters|May 1, 2025
Enhancing light extraction efficiency of 242 nm DUV micro-LEDs via hybrid nanorod arraysLicai Zhu, Shunpeng Lu, Ke Jiang, et al.
Optics Letters|November 14, 2025
Enhancing WPE for AlGaN-based DUV LEDs using a hybrid heterostructure and recessed electrodes designYuxuan Chen, Ke Jiang, Bingxiang Wang, et al.
Optics Express|June 13, 2014
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodesZi-Hui Zhang, Wei Liu, Swee Tiam Tan, et al.
Optics Express|January 22, 2015
Low thermal-mass LEDs: size effect and limitsShunpeng Lu, Wei Liu, Zi-Hui Zhang, et al.
Optics Express|February 12, 2014
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodesZabu Kyaw, Zi-Hui Zhang, Wei Liu, et al.
Optics Express|June 11, 2026
Temperature-dependent characteristics of GaN-based laser diodesZhen Yang, Haolin Jia, Junhui Hu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|March 20, 2024
In Situ Growth of Wafer-Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n-AlGaN Heterojunction for Visual LearningYang Chen, Zhiming Shi, Bingchen Lv, et al.
Pageof 1

Showing results (1-10 of 10) with videos related to

Sort By:
Pageof 1
Frontiers in Chemistry|February 12, 2021
Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall ArchitectureYiping Zhang, Shunpeng Lu, Ying Qiu, et al.
Frontiers in Chemistry|April 5, 2021
Strain-Reduced Micro-LEDs Grown Directly Using Partitioned GrowthShunpeng Lu, Yiping Zhang, Zi-Hui Zhang, et al.
Optics Letters|June 15, 2023
Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structureNianlei Jiang, Yang Chen, Bingchen Lv, et al.
Optics Letters|May 1, 2025
Enhancing light extraction efficiency of 242 nm DUV micro-LEDs via hybrid nanorod arraysLicai Zhu, Shunpeng Lu, Ke Jiang, et al.
Optics Letters|November 14, 2025
Enhancing WPE for AlGaN-based DUV LEDs using a hybrid heterostructure and recessed electrodes designYuxuan Chen, Ke Jiang, Bingxiang Wang, et al.
Optics Express|June 13, 2014
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodesZi-Hui Zhang, Wei Liu, Swee Tiam Tan, et al.
Optics Express|January 22, 2015
Low thermal-mass LEDs: size effect and limitsShunpeng Lu, Wei Liu, Zi-Hui Zhang, et al.
Optics Express|February 12, 2014
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodesZabu Kyaw, Zi-Hui Zhang, Wei Liu, et al.
Optics Express|June 11, 2026
Temperature-dependent characteristics of GaN-based laser diodesZhen Yang, Haolin Jia, Junhui Hu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|March 20, 2024
In Situ Growth of Wafer-Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n-AlGaN Heterojunction for Visual LearningYang Chen, Zhiming Shi, Bingchen Lv, et al.
Pageof 1