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Showing results (1-10 of 10) with videos related to

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Micromachines|March 6, 2021
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTsJie Wang, Zhanfei Chen, Shuzhen You, et al.
Micromachines|August 29, 2024
A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate DielectricJie Zhang, Xiangdong Li, Jian Ji, et al.
Micromachines|January 26, 2024
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide GateZhanfei Han, Xiangdong Li, Hongyue Wang, et al.
Materials (Basel, Switzerland)|October 29, 2020
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and ReliabilityKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Micromachines|May 27, 2023
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping CharacterizationXiangdong Li, Meng Wang, Jincheng Zhang, et al.
Nanotechnology|November 19, 2025
Improved selectivity in dry etching of lithium niobate with thermal annealed hydrogen silsesquioxane maskSongyan Hou, Chengyi Zhu, Jiajun Zhang, et al.
Micromachines|May 27, 2023
Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO GateZhanfei Han, Xiangdong Li, Hongyue Wang, et al.
Micromachines|January 8, 2025
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice LayersShuzhen You, Yilong Lei, Liang Wang, et al.
Micromachines|April 30, 2021
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>-</sup>n Diodes: The Road to Reliable Vertical MOSFETsKalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, et al.
Materials (Basel, Switzerland)|May 5, 2021
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack OptimizationKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Pageof 1

Showing results (1-10 of 10) with videos related to

Sort By:
Pageof 1
Micromachines|March 6, 2021
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTsJie Wang, Zhanfei Chen, Shuzhen You, et al.
Micromachines|August 29, 2024
A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate DielectricJie Zhang, Xiangdong Li, Jian Ji, et al.
Micromachines|January 26, 2024
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide GateZhanfei Han, Xiangdong Li, Hongyue Wang, et al.
Materials (Basel, Switzerland)|October 29, 2020
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and ReliabilityKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Micromachines|May 27, 2023
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping CharacterizationXiangdong Li, Meng Wang, Jincheng Zhang, et al.
Nanotechnology|November 19, 2025
Improved selectivity in dry etching of lithium niobate with thermal annealed hydrogen silsesquioxane maskSongyan Hou, Chengyi Zhu, Jiajun Zhang, et al.
Micromachines|May 27, 2023
Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO GateZhanfei Han, Xiangdong Li, Hongyue Wang, et al.
Micromachines|January 8, 2025
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice LayersShuzhen You, Yilong Lei, Liang Wang, et al.
Micromachines|April 30, 2021
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>-</sup>n Diodes: The Road to Reliable Vertical MOSFETsKalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, et al.
Materials (Basel, Switzerland)|May 5, 2021
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack OptimizationKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Pageof 1