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Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Jie Wang1, Zhanfei Chen1, Shuzhen You2

  • 1The Key Laboratory for RF Circuit and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310012, China.

Micromachines
|March 6, 2021
PubMed

Keywords:
compact modelp-GaN gate high-electron mobility transistorsphysics-based modelssurface potential

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