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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 1, 2013

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.

Jie Wang¹, Zhanfei Chen¹, Shuzhen You²

¹The Key Laboratory for RF Circuit and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310012, China.

|March 6, 2021

Summary

We developed a surface potential (SP)-based model for p-GaN gate high electron mobility transistors (HEMTs). This accurate model accounts for all channel charges, enabling precise device performance prediction.

Keywords:

compact model p-GaN gate high-electron mobility transistors physics-based models surface potential

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Area of Science:

Semiconductor device physics
Materials science of Gallium Nitride (GaN) devices

Background:

High electron mobility transistors (HEMTs) are crucial for high-frequency applications.
Accurate device modeling is essential for optimizing HEMT performance.
p-GaN gate HEMTs present unique modeling challenges due to complex charge dynamics.

Purpose of the Study:

To develop a surface potential (SP)-based compact model for p-GaN gate HEMTs.
To accurately incorporate all relevant charge components in the GaN channel.
To derive closed-form current-voltage (I-V) equations for device simulation.

Main Methods:

Solving the Poisson equation to determine surface potential distribution.
Including unintended Mg doping density from out-diffusion in the model.
Developing an analytical approximate solution for the SP equation.
Deriving closed-form I-V equations from the SP solution.

Main Results:

The proposed SP-based model accurately calculates surface potential in p-GaN gate HEMTs.
The model accounts for unintended Mg doping, improving accuracy.
Closed-form I-V equations were successfully derived from the model.
The model is implemented using physical parameters in Verilog-A code.

Conclusions:

The developed SP-based compact model offers a highly accurate and physically grounded approach for p-GaN gate HEMTs.
The model's ability to include unintended doping enhances its applicability.
Verilog-A implementation facilitates integration into circuit simulators for device design and analysis.