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Scientific Reports
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September 26, 2023
Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory
Stanislav Sin, Saeroonter Oh
Scientific Reports
|
November 17, 2022
Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory
Stanislav Sin, Saeroonter Oh
Small (Weinheim an Der Bergstrasse, Germany)
|
May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 3) with videos related to
Sort By:
Page
of 1
Scientific Reports
|
September 26, 2023
Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory
Stanislav Sin, Saeroonter Oh
Scientific Reports
|
November 17, 2022
Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory
Stanislav Sin, Saeroonter Oh
Small (Weinheim an Der Bergstrasse, Germany)
|
May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Page
of 1