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Stanislav Sin

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Scientific Reports|September 26, 2023
Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memoryStanislav Sin, Saeroonter Oh
Scientific Reports|November 17, 2022
Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memoryStanislav Sin, Saeroonter Oh
Small (Weinheim an Der Bergstrasse, Germany)|May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric TransistorSangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Scientific Reports|September 26, 2023
Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memoryStanislav Sin, Saeroonter Oh
Scientific Reports|November 17, 2022
Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memoryStanislav Sin, Saeroonter Oh
Small (Weinheim an Der Bergstrasse, Germany)|May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric TransistorSangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Pageof 1