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Stefan Dünkel

Showing results (1-10 of 4) with videos related to

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Nanoscale|September 22, 2021
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free readHalid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, et al.
Nanotechnology|July 28, 2021
Ferroelectric field-effect transistors based on HfO<sub>2</sub>: a reviewHalid Mulaosmanovic, Evelyn T Breyer, Stefan Dünkel, et al.
Nano Letters|February 10, 2023
Sub-Nanosecond Switching of Si:HfO<sub>2</sub> Ferroelectric Field-Effect TransistorMor Mordechai Dahan, Halid Mulaosmanovic, Or Levit, et al.
ACS Applied Materials & Interfaces|September 17, 2020
Frequency Mixing with HfO<sub>2</sub>-Based Ferroelectric TransistorsHalid Mulaosmanovic, Stefan Dünkel, Martin Trentzsch, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Nanoscale|September 22, 2021
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free readHalid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, et al.
Nanotechnology|July 28, 2021
Ferroelectric field-effect transistors based on HfO<sub>2</sub>: a reviewHalid Mulaosmanovic, Evelyn T Breyer, Stefan Dünkel, et al.
Nano Letters|February 10, 2023
Sub-Nanosecond Switching of Si:HfO<sub>2</sub> Ferroelectric Field-Effect TransistorMor Mordechai Dahan, Halid Mulaosmanovic, Or Levit, et al.
ACS Applied Materials & Interfaces|September 17, 2020
Frequency Mixing with HfO<sub>2</sub>-Based Ferroelectric TransistorsHalid Mulaosmanovic, Stefan Dünkel, Martin Trentzsch, et al.
Pageof 1