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Stephan Wirths

Showing results (1-10 of 7) with videos related to

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ACS Nano|January 25, 2018
Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on SiliconStephan Wirths, Benedikt F Mayer, Heinz Schmid, et al.
Nanotechnology|March 6, 2014
Quantum dots in InAs nanowires induced by surface potential fluctuationsKarl Weis, Stephan Wirths, Andreas Winden, et al.
Nano Letters|March 24, 2017
Ballistic One-Dimensional InAs Nanowire Cross-Junction InterconnectsJohannes Gooth, Mattias Borg, Heinz Schmid, et al.
ACS Nano|February 23, 2017
High-Mobility GaSb Nanostructures Cointegrated with InAs on SiMattias Borg, Heinz Schmid, Johannes Gooth, et al.
ACS Applied Materials & Interfaces|August 31, 2018
Dopant-Induced Modifications of Ga <sub>x</sub>In<sub>(1- x)</sub>P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)Nicolas Bologna, Stephan Wirths, Luca Francaviglia, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 5, 2017
SiGeSn Ternaries for Efficient Group IV Heterostructure Light EmittersNils von den Driesch, Daniela Stange, Stephan Wirths, et al.
ACS Applied Materials & Interfaces|December 23, 2014
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistorsStephan Wirths, Daniela Stange, Maria-Angela Pampillón, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
ACS Nano|January 25, 2018
Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on SiliconStephan Wirths, Benedikt F Mayer, Heinz Schmid, et al.
Nanotechnology|March 6, 2014
Quantum dots in InAs nanowires induced by surface potential fluctuationsKarl Weis, Stephan Wirths, Andreas Winden, et al.
Nano Letters|March 24, 2017
Ballistic One-Dimensional InAs Nanowire Cross-Junction InterconnectsJohannes Gooth, Mattias Borg, Heinz Schmid, et al.
ACS Nano|February 23, 2017
High-Mobility GaSb Nanostructures Cointegrated with InAs on SiMattias Borg, Heinz Schmid, Johannes Gooth, et al.
ACS Applied Materials & Interfaces|August 31, 2018
Dopant-Induced Modifications of Ga <sub>x</sub>In<sub>(1- x)</sub>P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)Nicolas Bologna, Stephan Wirths, Luca Francaviglia, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 5, 2017
SiGeSn Ternaries for Efficient Group IV Heterostructure Light EmittersNils von den Driesch, Daniela Stange, Stephan Wirths, et al.
ACS Applied Materials & Interfaces|December 23, 2014
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistorsStephan Wirths, Daniela Stange, Maria-Angela Pampillón, et al.
Pageof 1