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Sylvain Barraud

Showing results (1-10 of 14) with videos related to

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Ultramicroscopy|October 22, 2013
3D spatial resolution improvement by dual-axis electron tomography: application to tri-gate transistorsGeorg Haberfehlner, Raphaël Serra, David Cooper, et al.
Micromachines|July 2, 2021
Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical SensingSaurabh Tomar, Charlotte Lasne, Sylvain Barraud, et al.
Nano Letters|August 27, 2025
Wide Electrical Tunability of the Valley Splitting in a Doubly Gated Silicon-on-Insulator Quantum WellNathan Aubergier, Vincent T Renard, Sylvain Barraud, et al.
Biosensors|October 27, 2023
pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current ApproachYann Sprunger, Luca Capua, Thomas Ernst, et al.
Micromachines|December 26, 2018
Process Variability-Technological Challenge and Design Issue for Nanoscale DevicesJürgen Lorenz, Eberhard Bär, Sylvain Barraud, et al.
Nanotechnology|June 20, 2020
Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FETGeunsoo Yang, Donghyun Kim, Ji Woon Yang, et al.
Nano Letters|May 7, 2025
Polarimetry with Spins in the Solid StateLorenzo Peri, Felix-Ekkehard von Horstig, Sylvain Barraud, et al.
Nano Letters|February 12, 2016
Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect TransistorM Fernando Gonzalez-Zalba, Sergey N Shevchenko, Sylvain Barraud, et al.
Science Advances|December 13, 2018
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistorJoost van der Heijden, Takashi Kobayashi, Matthew G House, et al.
Nano Letters|April 30, 2015
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperatureRomain Lavieville, François Triozon, Sylvain Barraud, et al.
Pageof 2

Showing results (1-10 of 14) with videos related to

Sort By:
Pageof 2
Ultramicroscopy|October 22, 2013
3D spatial resolution improvement by dual-axis electron tomography: application to tri-gate transistorsGeorg Haberfehlner, Raphaël Serra, David Cooper, et al.
Micromachines|July 2, 2021
Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical SensingSaurabh Tomar, Charlotte Lasne, Sylvain Barraud, et al.
Nano Letters|August 27, 2025
Wide Electrical Tunability of the Valley Splitting in a Doubly Gated Silicon-on-Insulator Quantum WellNathan Aubergier, Vincent T Renard, Sylvain Barraud, et al.
Biosensors|October 27, 2023
pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current ApproachYann Sprunger, Luca Capua, Thomas Ernst, et al.
Micromachines|December 26, 2018
Process Variability-Technological Challenge and Design Issue for Nanoscale DevicesJürgen Lorenz, Eberhard Bär, Sylvain Barraud, et al.
Nanotechnology|June 20, 2020
Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FETGeunsoo Yang, Donghyun Kim, Ji Woon Yang, et al.
Nano Letters|May 7, 2025
Polarimetry with Spins in the Solid StateLorenzo Peri, Felix-Ekkehard von Horstig, Sylvain Barraud, et al.
Nano Letters|February 12, 2016
Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect TransistorM Fernando Gonzalez-Zalba, Sergey N Shevchenko, Sylvain Barraud, et al.
Science Advances|December 13, 2018
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistorJoost van der Heijden, Takashi Kobayashi, Matthew G House, et al.
Nano Letters|April 30, 2015
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperatureRomain Lavieville, François Triozon, Sylvain Barraud, et al.
Pageof 2