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Szymon Grzanka

Showing results (1-10 of 17) with videos related to

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Materials (Basel, Switzerland)|January 16, 2021
Effects of MOVPE Growth Conditions on GaN Layers Doped with GermaniumDario Schiavon, Elżbieta Litwin-Staszewska, Rafał Jakieła, et al.
Scientific Reports|January 23, 2025
InGaN multiquantum wells-problem of carrier injectionAgata Bojarska-Cieślińska, Łucja Marona, Szymon Grzanka, et al.
Micromachines|February 27, 2026
InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back ProcessKatarzyna Piotrowska-Wolińska, Szymon Grzanka, Łucja Marona, et al.
Materials (Basel, Switzerland)|September 28, 2024
Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range OperationMuhammed Aktas, Szymon Grzanka, Łucja Marona, et al.
Materials (Basel, Switzerland)|October 14, 2023
Palladium-Based Contacts on p-GaN and Their Application in Laser DiodesIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Optics Express|April 4, 2018
450 nm (Al,In)GaN optical amplifier with double 'j-shape' waveguide for master oscillator power amplifier systemsSzymon Stanczyk, Anna Kafar, Szymon Grzanka, et al.
Micromachines|February 25, 2023
Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN SemiconductorsKiran Saba, Anna Kafar, Jacek Kacperski, et al.
Nanomaterials (Basel, Switzerland)|January 24, 2025
In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum WellsEwa Grzanka, Sondes Bauer, Artur Lachowski, et al.
Scientific Reports|January 9, 2021
Role of dislocations in nitride laser diodes with different indium contentAgata Bojarska-Cieślińska, Łucja Marona, Julita Smalc-Koziorowska, et al.
ACS Applied Materials & Interfaces|October 28, 2024
Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN ContactsAleksandra Wójcicka, Zsolt Fogarassy, Tatyana Kravchuk, et al.
Pageof 2

Showing results (1-10 of 17) with videos related to

Sort By:
Pageof 2
Materials (Basel, Switzerland)|January 16, 2021
Effects of MOVPE Growth Conditions on GaN Layers Doped with GermaniumDario Schiavon, Elżbieta Litwin-Staszewska, Rafał Jakieła, et al.
Scientific Reports|January 23, 2025
InGaN multiquantum wells-problem of carrier injectionAgata Bojarska-Cieślińska, Łucja Marona, Szymon Grzanka, et al.
Micromachines|February 27, 2026
InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back ProcessKatarzyna Piotrowska-Wolińska, Szymon Grzanka, Łucja Marona, et al.
Materials (Basel, Switzerland)|September 28, 2024
Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range OperationMuhammed Aktas, Szymon Grzanka, Łucja Marona, et al.
Materials (Basel, Switzerland)|October 14, 2023
Palladium-Based Contacts on p-GaN and Their Application in Laser DiodesIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Optics Express|April 4, 2018
450 nm (Al,In)GaN optical amplifier with double 'j-shape' waveguide for master oscillator power amplifier systemsSzymon Stanczyk, Anna Kafar, Szymon Grzanka, et al.
Micromachines|February 25, 2023
Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN SemiconductorsKiran Saba, Anna Kafar, Jacek Kacperski, et al.
Nanomaterials (Basel, Switzerland)|January 24, 2025
In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum WellsEwa Grzanka, Sondes Bauer, Artur Lachowski, et al.
Scientific Reports|January 9, 2021
Role of dislocations in nitride laser diodes with different indium contentAgata Bojarska-Cieślińska, Łucja Marona, Julita Smalc-Koziorowska, et al.
ACS Applied Materials & Interfaces|October 28, 2024
Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN ContactsAleksandra Wójcicka, Zsolt Fogarassy, Tatyana Kravchuk, et al.
Pageof 2