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Taehwan Moon

Showing results (1-10 of 22) with videos related to

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Nano Convergence|December 19, 2023
Filament-free memristors for computingSanghyeon Choi, Taehwan Moon, Gunuk Wang, et al.
Materials Horizons|August 27, 2024
Leveraging volatile memristors in neuromorphic computing: from materials to system implementationTaehwan Moon, Keunho Soh, Jong Sung Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 5, 2016
Giant Negative Electrocaloric Effects of Hf<sub>0.5</sub> Zr<sub>0.5</sub> O<sub>2</sub> Thin FilmsMin Hyuk Park, Han Joon Kim, Yu Jin Kim, et al.
ACS Applied Materials & Interfaces|November 24, 2018
Morphotropic Phase Boundary of Hf<sub>1- x</sub>Zr <sub>x</sub>O<sub>2</sub> Thin Films for Dynamic Random Access MemoriesMin Hyuk Park, Young Hwan Lee, Han Joon Kim, et al.
Nanoscale|January 5, 2016
Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin filmsMin Hyuk Park, Han Joon Kim, Young Hwan Lee, et al.
Nanoscale|October 30, 2015
A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurementHan Joon Kim, Min Hyuk Park, Yu Jin Kim, et al.
Nanotechnology|June 1, 2017
Preparation and characterization of ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films grown by reactive sputteringYoung Hwan Lee, Han Joon Kim, Taehwan Moon, et al.
Chemical Communications (Cambridge, England)|January 24, 2025
HfO<sub>2</sub>-based ferroelectric synaptic devices: challenges and engineering solutionsTaegyu Kwon, Hyeong Seok Choi, Dong Hyun Lee, et al.
Chemical Communications (Cambridge, England)|February 24, 2025
Correction: HfO<sub>2</sub>-based ferroelectric synaptic devices: challenges and engineering solutionsTaegyu Kwon, Hyeong Seok Choi, Dong Hyun Lee, et al.
Scientific Reports|January 9, 2016
Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer StructureYu Jin Kim, Min Hyuk Park, Young Hwan Lee, et al.
Pageof 3

Showing results (1-10 of 22) with videos related to

Sort By:
Pageof 3
Nano Convergence|December 19, 2023
Filament-free memristors for computingSanghyeon Choi, Taehwan Moon, Gunuk Wang, et al.
Materials Horizons|August 27, 2024
Leveraging volatile memristors in neuromorphic computing: from materials to system implementationTaehwan Moon, Keunho Soh, Jong Sung Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 5, 2016
Giant Negative Electrocaloric Effects of Hf<sub>0.5</sub> Zr<sub>0.5</sub> O<sub>2</sub> Thin FilmsMin Hyuk Park, Han Joon Kim, Yu Jin Kim, et al.
ACS Applied Materials & Interfaces|November 24, 2018
Morphotropic Phase Boundary of Hf<sub>1- x</sub>Zr <sub>x</sub>O<sub>2</sub> Thin Films for Dynamic Random Access MemoriesMin Hyuk Park, Young Hwan Lee, Han Joon Kim, et al.
Nanoscale|January 5, 2016
Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin filmsMin Hyuk Park, Han Joon Kim, Young Hwan Lee, et al.
Nanoscale|October 30, 2015
A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurementHan Joon Kim, Min Hyuk Park, Yu Jin Kim, et al.
Nanotechnology|June 1, 2017
Preparation and characterization of ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films grown by reactive sputteringYoung Hwan Lee, Han Joon Kim, Taehwan Moon, et al.
Chemical Communications (Cambridge, England)|January 24, 2025
HfO<sub>2</sub>-based ferroelectric synaptic devices: challenges and engineering solutionsTaegyu Kwon, Hyeong Seok Choi, Dong Hyun Lee, et al.
Chemical Communications (Cambridge, England)|February 24, 2025
Correction: HfO<sub>2</sub>-based ferroelectric synaptic devices: challenges and engineering solutionsTaegyu Kwon, Hyeong Seok Choi, Dong Hyun Lee, et al.
Scientific Reports|January 9, 2016
Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer StructureYu Jin Kim, Min Hyuk Park, Young Hwan Lee, et al.
Pageof 3