Halogens
Atomic Fluorescence Spectroscopy
Hess's Law
Radical Formation: Homolysis
The Aufbau Principle and Hund's Rule
ortho–para-Directing Deactivators: Halogens
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Taegyu Kwon1, Hyeong Seok Choi1, Dong Hyun Lee1
1Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea. minhyuk.park@snu.ac.kr.
This correction addresses errors in a previous article on hafnium oxide (HfO2)-based ferroelectric synaptic devices. It provides updated information on the challenges and engineering solutions for these advanced electronic components.
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