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Taikyu Kim

Showing results (1-10 of 14) with videos related to

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Communications Engineering|July 7, 2026
Bridging the p-type gap in oxide electronics with 2D semiconductorsTaikyu Kim, Seokhyun Hwang, Jae Kyeong Jeong
ACS Applied Materials & Interfaces|November 20, 2019
Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film TransistorSungyeon Yim, Taikyu Kim, Baekeun Yoo, et al.
ACS Applied Materials & Interfaces|April 6, 2023
High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer DepositionMin Hoe Cho, Cheol Hee Choi, Min Jae Kim, et al.
ACS Applied Materials & Interfaces|June 11, 2021
High-Performance Indium Gallium Tin Oxide Transistors with an Al<sub>2</sub>O<sub>3</sub> Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al<sub>2</sub>O<sub>3</sub> Dielectric FilmCheol Hee Choi, Taikyu Kim, Shigenori Ueda, et al.
Scientific Reports|April 1, 2024
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO<sub>2</sub> gate dielectric through insertion of SiO<sub>2</sub> interlayerCheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
Small Methods|March 17, 2023
High Mobility IZTO Thin-Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical ReactionGwang-Bok Kim, Nuri On, Taikyu Kim, et al.
ACS Applied Materials & Interfaces|October 3, 2019
Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device ApplicationTaikyu Kim, Baekeun Yoo, Yong Youn, et al.
ACS Applied Materials & Interfaces|January 10, 2022
High-Performance Broadband Phototransistor Based on TeO<sub></sub>/IGTO HeterojunctionsHongwei Xu, Taikyu Kim, HeeSung Han, et al.
ACS Applied Materials & Interfaces|July 4, 2024
Atomic Layer Growth of Rutile TiO<sub>2</sub> Films with Ultrahigh Dielectric Constants via Crystal Orientation EngineeringTaikyu Kim, Jihoon Jeon, Seung Ho Ryu, et al.
ACS Applied Materials & Interfaces|April 25, 2024
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide TransistorsGwang-Bok Kim, Taikyu Kim, Seon Woong Bang, et al.
Pageof 2

Showing results (1-10 of 14) with videos related to

Sort By:
Pageof 2
Communications Engineering|July 7, 2026
Bridging the p-type gap in oxide electronics with 2D semiconductorsTaikyu Kim, Seokhyun Hwang, Jae Kyeong Jeong
ACS Applied Materials & Interfaces|November 20, 2019
Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film TransistorSungyeon Yim, Taikyu Kim, Baekeun Yoo, et al.
ACS Applied Materials & Interfaces|April 6, 2023
High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer DepositionMin Hoe Cho, Cheol Hee Choi, Min Jae Kim, et al.
ACS Applied Materials & Interfaces|June 11, 2021
High-Performance Indium Gallium Tin Oxide Transistors with an Al<sub>2</sub>O<sub>3</sub> Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al<sub>2</sub>O<sub>3</sub> Dielectric FilmCheol Hee Choi, Taikyu Kim, Shigenori Ueda, et al.
Scientific Reports|April 1, 2024
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO<sub>2</sub> gate dielectric through insertion of SiO<sub>2</sub> interlayerCheol Hee Choi, Taikyu Kim, Min Jae Kim, et al.
Small Methods|March 17, 2023
High Mobility IZTO Thin-Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical ReactionGwang-Bok Kim, Nuri On, Taikyu Kim, et al.
ACS Applied Materials & Interfaces|October 3, 2019
Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device ApplicationTaikyu Kim, Baekeun Yoo, Yong Youn, et al.
ACS Applied Materials & Interfaces|January 10, 2022
High-Performance Broadband Phototransistor Based on TeO<sub></sub>/IGTO HeterojunctionsHongwei Xu, Taikyu Kim, HeeSung Han, et al.
ACS Applied Materials & Interfaces|July 4, 2024
Atomic Layer Growth of Rutile TiO<sub>2</sub> Films with Ultrahigh Dielectric Constants via Crystal Orientation EngineeringTaikyu Kim, Jihoon Jeon, Seung Ho Ryu, et al.
ACS Applied Materials & Interfaces|April 25, 2024
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide TransistorsGwang-Bok Kim, Taikyu Kim, Seon Woong Bang, et al.
Pageof 2